STMicroelectronics Latest Technologies in Power MOSFET & IGBT
STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low RDS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.
Featured Products
STMicroelectronics STGWA30IH160DF2 1600V IH2 Series IGBT
Created by implementing an advanced proprietary trench gate field-stop structure.
STMicroelectronics N-channel MDmesh V Power MOSFET
Has extremely low on-resistance & MDmesh™ V revolutionary Power MOSFET technology with PowerMESH™.
STMicroelectronics MDmesh™ II Power MOSFETs
Industry leading low on-resistance and low gate charge.
STMicroelectronics MDmesh™ DM2 Power MOSFETs
MOSFETs with a fast recovery intrinsic diode optimized for ZVS phase-shift bridge topologies.
STMicroelectronics 600V MDmesh™ DM6 Super-junction MOSFETs
Super-junction MOSFETs optimized for ZVS, full-bridge, and half-bridge topologies.
STMicroelectronics MDmesh K5 Power MOSFETs
Ensures very good dv/dt capability for the most demanding applications.
STMicroelectronics STripFET™ F7 Power MOSFETs
Enhanced trench-gate structure with fast and efficient switching for simplified designs.
STMicroelectronics Silicon Carbide Power MOSFETs
Bring the advanced efficiency and reliability of wide bandgap materials to a broader range.
STMicroelectronics STM 650V M Series Trench Gate Field-Stop IGBTs
Punch-through PowerMESH technology and the newly introduced trench-gate field-stop technology.
STMicroelectronics IGBT V Series
Developed using an advanced proprietary trench gate and field stop structure.
STMicroelectronics HB/HB2 Series Insulated-Gate Bipolar Transistors
Combine a very low saturation voltage with a minimal collector current turn-off tail.
STMicroelectronics 1200V H Series Trench Gate Field-Stop IGBTs
High speed IGBTs with a 5μs minimum short circuit withstand time at TJ=150°C.
STMicroelectronics 650V IH Series IGBTs
Offer high efficiency for induction heating systems and soft switching applications.