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onsemi NVMFS5830NL Single N-Channel Power MOSFET

onsemi NVMFS5830NL Single N-Channel Power MOSFET is a high-efficiency power MOSFET designed for demanding power management applications. Utilizing advanced trench technology, the onsemi NVMFS5830NL delivers exceptionally low RDS(on) performance (2.3mΩ at VGS = 10V), making the MOSFET ideal for minimizing conduction losses in high-current systems. The 5mm x 6mm x 1mm, flat-lead SO-8FL package enhances thermal performance and board space efficiency, while the low gate charge and fast switching characteristics contribute to improved overall system efficiency. A wettable flank option is available for enhanced optical inspection. With the combination of high current capability, low switching losses, and a compact footprint, the NVMFS5830NL is well-suited for use in motor control applications and high-/low-side load switches.

Features

  • Small Footprint (5mm x 6mm) for compact design
  • Low RDS(on) to minimize conduction losses
  • Low QG and capacitance to minimize driver losses
  • DFN5 (SO−8FL) Case 488AA Style 1 package, wettable flanks
  • AEC-Q101 qualified and PPAP capable
  • Lead-free, Halogen-free, and RoHS-compliant

Applications

  • Motor control
  • High-/low-side load switches

Specifications

  • 40V maximum drain-to-source voltage
  • ±20V maximum gate-to-source voltage
  • 1012A maximum pulsed drain current
  • 361mJ maximum single pulse drain-to-source avalanche energy
  • Off characteristics
    • 40V minimum drain-to-source breakdown voltage
    • 32mV/°C typical drain-to-source breakdown voltage temperature coefficient
    • 1µA (at +25°) to 100µA (at +125°C) maximum zero gate voltage drain current range
    • ±100nA maximum gate-to-source leakage current
  • On characteristics
    • 1.4V to 2.4V gate threshold voltage range
    • 7.2mV/°C typical negative threshold temperature coefficient
    • 2.3mΩ (at 10V) to 3.6mΩ (at 4.5V) maximum drain-to-souce on resistance range
    • 38S typical forward transconductance
  • Typical capacitance
    • 5880pF input
    • 750pF output
    • 500pF reverse transfer
  • Charges
    • 58nC to 113nC typical total gate charge range
    • 5.5nC typical threshold gate charge
    • 19.5nC typical gate-to-source charge
    • 32nC typical gate-to-drain charge
    • 3.6V typical plateau voltage
  • Typical switching characteristics
    • 22ns turn-on delay time
    • 32ns rise time
    • 40ns turn-off delay time
    • 27ns fall time
  • Drain-source diode characteristics
    • 1.0V maximum forward diode voltage
    • 41ns typical reverse recovery time
    • 19ns typical charge/discharge time
    • 33nC typical reverse recovery charge
  • Maximum thermal resistance
    • 1.0°C/W junction-to-mounting board, steady state
    • 39°C/W junction-to-ambient, steady state
  • +260°C maximum lead soldering temperature

Schematic

Schematic - onsemi NVMFS5830NL Single N-Channel Power MOSFET

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Publicado: 2025-11-04 | Actualizado: 2025-11-19