800V CoolMOS™ P7 MOSFETs

Infineon 800V CoolMOS™ P7 MOSFETs combine best-in-class performance with ease-of-use. The P7 set a new benchmark in 800V super junction technologies. The transistors offer up to 0.6 percent efficiency gain and 2°C to 8°C lower MOSFET temperature. The transistors feature optimized device parameters like over 50% reduction in Eoss and Qg, reduced Ciss and Coss. The CoolMOS P7 also enable higher power density designs through lower switching losses and better DPAK RDS(on) products. The CoolMOS P7 are a perfect fit for low-power SMPS applications.

Resultados: 30
Seleccionar Imagen N.° de pieza Fabricante: Descripción Hoja de datos Disponibilidad Precio: (USD) Filtre los resultados en la tabla por precio unitario en función de su cantidad. Cantidad RoHS Modelo ECAD Tecnología Estilo de montaje Paquete / Cubierta Polaridad del transistor Número de canales Vds - Tensión disruptiva entre drenaje y fuente Id - Corriente de drenaje continua Rds On - Resistencia entre drenaje y fuente Vgs - Tensión entre puerta y fuente Vgs th - Tensión umbral entre puerta y fuente Qg - Carga de puerta Temperatura de trabajo mínima Temperatura de trabajo máxima Dp - Disipación de potencia Modo canal Nombre comercial Empaquetado
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW 4,600En existencias
Cinta cortada
$4.38
$2.20
$1.98
$1.60
$1.56
Envase tipo carrete
$1.47
Min.: 1
Mult.: 1
: 2,500
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 800 V 13 A 310 mOhms 20 V 2.5 V 30 nC - 55 C + 150 C 84 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW 9,128En existencias
Cinta cortada
$1.81
$0.848
$0.754
$0.588
Envase tipo carrete
$0.471
Ver
Min.: 1
Mult.: 1
: 2,500
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 800 V 2.5 A 2 Ohms 20 V 2.5 V 7.5 nC - 55 C + 150 C 22 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW 4,448En existencias
Cinta cortada
$2.82
$1.37
$1.22
$0.969
$0.898
Envase tipo carrete
$0.806
Min.: 1
Mult.: 1
: 2,500
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 800 V 7 A 640 mOhms 20 V 2.5 V 17 nC - 55 C + 150 C 51 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW 7,416En existencias
Cinta cortada
$2.61
$1.26
$1.12
$0.889
$0.848
Envase tipo carrete
$0.727
Min.: 1
Mult.: 1
: 2,500
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 800 V 6 A 770 mOhms 20 V 2.5 V 15 nC - 55 C + 150 C 45 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW 8,650En existencias
Cinta cortada
$2.33
$1.11
$0.987
$0.777
Envase tipo carrete
$0.632
Ver
Min.: 1
Mult.: 1
: 2,500
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 800 V 4.5 A 1 Ohms 20 V 2.5 V 11 nC - 55 C + 150 C 37 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW 1,216En existencias
$2.95
$1.43
$1.28
$0.978
Ver
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 6 A 770 mOhms 20 V 2.5 V 15 nC - 55 C + 150 C 26 W Enhancement CoolMOS Tube
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW 1,318En existencias
$3.46
$1.70
$1.52
$1.19
Ver
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 8 A 510 mOhms 20 V 2.5 V 20 nC - 55 C + 150 C 28 W Enhancement CoolMOS Tube
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW 2,877En existencias
Cinta cortada
$1.87
$1.10
$0.935
$0.742
Envase tipo carrete
$0.593
Ver
Min.: 1
Mult.: 1
: 2,500
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 800 V 4 A 1.4 Ohms 30 V 3 V 10 nC - 55 C + 150 C 32 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW 2,343En existencias
14,000En pedido
Cinta cortada
$1.99
$0.933
$0.831
$0.65
Envase tipo carrete
$0.517
Ver
Min.: 1
Mult.: 1
: 3,000
Si SMD/SMT SOT-223-3 N-Channel 1 Channel 800 V 4 A 1.2 Ohms 20 V 2.5 V 10 nC - 55 C + 150 C 7 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW 1,411En existencias
$2.64
$1.18
$1.06
$0.889
Ver
Min.: 1
Mult.: 1
Si Through Hole TO-251-3 N-Channel 1 Channel 800 V 6 A 900 mOhms 20 V 2.5 V 15 nC - 55 C + 150 C 45 W Enhancement CoolMOS Tube
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW 7,574En existencias
500En pedido
$3.32
$1.61
$1.48
$1.18
$0.957
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 7 A 640 mOhms 20 V 2.5 V 17 nC - 55 C + 150 C 27 W Enhancement CoolMOS Tube
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW 7,135En existencias
Cinta cortada
$4.76
$2.67
$2.42
$2.00
$1.99
Envase tipo carrete
$1.87
Min.: 1
Mult.: 1
Máx.: 2,500
: 2,500
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 800 V 17 A 280 mOhms 30 V 3 V 36 nC - 50 C + 150 C 101 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW 5,287En existencias
5,000Se espera el 28/01/2027
Cinta cortada
$3.30
$1.66
$1.44
$1.19
Envase tipo carrete
$0.987
Ver
Min.: 1
Mult.: 1
: 2,500
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 800 V 8 A 510 mOhms 20 V 2.5 V 20 nC - 55 C + 150 C 60 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW 2,982En existencias
Cinta cortada
$3.00
$1.47
$1.33
$1.05
$1.01
Envase tipo carrete
$0.888
Min.: 1
Mult.: 1
: 3,000
Si SMD/SMT SOT-223-3 N-Channel 1 Channel 800 V 8 A 510 mOhms 30 V 3 V 20 nC - 55 C + 150 C 7.4 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW 1,489En existencias
2,500Se espera el 05/11/2026
Cinta cortada
$1.96
$0.92
$0.819
$0.641
Envase tipo carrete
$0.52
Ver
Min.: 1
Mult.: 1
: 2,500
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 800 V 3 A 1.7 Ohms 20 V 2.5 V 9 nC - 55 C + 150 C 24 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW 702En existencias
$2.61
$1.25
$1.12
$0.952
Ver
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 4 A 1.4 Ohms 30 V 3 V 10 nC - 55 C + 150 C 24 W Enhancement CoolMOS Tube
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW 478En existencias
$5.53
$2.82
$2.56
$2.08
$2.07
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 17 A 280 mOhms 30 V 3 V 36 nC - 55 C + 150 C 30 W Enhancement CoolMOS Tube
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW 734En existencias
$4.60
$2.99
$2.09
$1.76
Ver
Min.: 1
Mult.: 1
Si Through Hole TO-220FP-3 N-Channel 1 Channel 800 V 13 A 310 mOhms 20 V 2.5 V 30 nC - 55 C + 150 C 30 W Enhancement CoolMOS Tube
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 800V CoolMOS P7PowerDevice 4,447En existencias
Cinta cortada
$1.68
$0.781
$0.66
$0.524
Envase tipo carrete
$0.465
Ver
Min.: 1
Mult.: 1
: 2,500
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 800 V 1.9 A 2.8 Ohms 20 V 2.5 V 5.8 nC - 55 C + 150 C 18 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW 159En existencias
10,000En pedido
Cinta cortada
$3.97
$2.22
$1.77
$1.39
$1.33
Envase tipo carrete
$1.21
Min.: 1
Mult.: 1
: 2,500
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 800 V 11 A 450 mOhms 30 V 3 V 24 nC - 50 C + 150 C 73 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW 3,652En existencias
Cinta cortada
$1.59
$0.735
$0.633
$0.504
Envase tipo carrete
$0.429
Ver
Min.: 1
Mult.: 1
: 2,500
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 800 V 1.5 A 4.5 Ohms 30 V 3 V 4 nC - 50 C + 150 C 13 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW 663En existencias
6,000En pedido
Cinta cortada
$1.68
$0.784
$0.696
$0.541
Envase tipo carrete
$0.426
Ver
Min.: 1
Mult.: 1
: 3,000
Si SMD/SMT SOT-223-3 N-Channel 1 Channel 800 V 2.5 A 2 Ohms 30 V 3.5 V 7.5 nC - 55 C + 150 C 500 mW Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW 3,000En existencias
24,000Se espera el 10/12/2026
Cinta cortada
$1.44
$0.664
$0.589
$0.455
Envase tipo carrete
$0.355
Ver
Min.: 1
Mult.: 1
: 3,000
Si SMD/SMT SOT-223-3 N-Channel 1 Channel 800 V 1.5 A 3.8 Ohms 20 V 2.5 V 4 nC - 55 C + 150 C 6 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW 1,486En existencias
$1.59
$0.689
$0.612
$0.504
Ver
Min.: 1
Mult.: 1
Si Through Hole TO-251-3 N-Channel 1 Channel 800 V 1.5 A 4.5 Ohms 30 V 3 V 4 nC - 50 C + 150 C 13 W Enhancement CoolMOS Tube

Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW 108En existencias
$6.01
$3.00
$2.74
$2.29
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 800 V 17 A 280 mOhms 30 V 3 V 36 nC - 50 C + 150 C 101 W Enhancement CoolMOS Tube