Memory for Digital X-Ray Imaging

Memory stores data and programs for later use. Some memory is Read-Only, which means nothing new can be stored, and other memory is Read/Write memory where a processor can read from or write to this method of data storage. Some memory is non-volatile, meaning that a power source is not required to preserve stored information. Other types of memory lose their information and become a blank slate every time power is removed from the device. Two types of memory, EEPROM and flash, share many of the same qualities - in fact, flash memory is often considered an advanced form of EEPROM. F-RAM is another type of non-volatile memory that offers fast writes, high endurance, and low energy consumption. Unlike flash, EEPROM is erasable at a more precise, byte-wise level. For this reason among others, EEPROM continues to see industry use in applications that must store small amounts of non-volatile data.

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Resultados: 34
Seleccionar Imagen N.° de pieza Fabricante: Descripción Hoja de datos Disponibilidad Precio: (USD) Filtre los resultados en la tabla por precio unitario en función de su cantidad. Cantidad RoHS Modelo ECAD Paquete / Cubierta Tipo de interfaz Tamaño de memoria Organización Ancho de bus de datos Tiempo de acceso Voltaje de alimentación - Mín. Voltaje de alimentación - Máx. Corriente de suministro operativa Temperatura de trabajo mínima Temperatura de trabajo máxima Serie Empaquetado
Everspin Technologies Memoria RAM magnetorresistiva 16Mb 3.3V 35ns 2Mx8 Parallel Memoria RAM magnetorresistiva 720En existencias
Min.: 1
Mult.: 1

TSOP-II-44 Parallel 16 Mbit 2 M x 8 8 bit 35 ns 3 V 3.6 V 60 mA, 152 mA 0 C + 70 C MR4A08B Tray
Everspin Technologies Memoria RAM magnetorresistiva 128Kb 3.3V 16Kx8 SPI 171En existencias
Min.: 1
Mult.: 1

DFN-8 SPI 128 kbit 16 k x 8 8 bit 2.7 V 3.6 V 6 mA, 23 mA - 40 C + 125 C MR25H128A Tray
Everspin Technologies Memoria RAM magnetorresistiva 1Mb 128Kx8 QUAD SPI Memoria RAM magnetorresistiva 0 to +70C 899En existencias
Min.: 1
Mult.: 1

SOIC-16 SPI 1 Mbit 128 k x 8 8 bit 7 ns 3 V 3.6 V 60 mA, 100 mA 0 C + 70 C MR10Q010 Tray
Everspin Technologies Memoria RAM magnetorresistiva 1Mb 3.3V 64Kx16 35ns Parallel Memoria RAM magnetorresistiva 1,038En existencias
Min.: 1
Mult.: 1

BGA-48 Parallel 1 Mbit 64 k x 16 16 bit 35 ns 3 V 3.6 V 55 mA, 105 mA - 40 C + 85 C MR0A16A Tray
Everspin Technologies Memoria RAM magnetorresistiva 1Mb 3.3V 64Kx16 35ns Parallel Memoria RAM magnetorresistiva 272En existencias
Min.: 1
Mult.: 1

TSOP-II-44 Parallel 1 Mbit 64 k x 16 16 bit 35 ns 3 V 3.6 V 55 mA, 105 mA 0 C + 70 C MR0A16A Tray
Everspin Technologies Memoria RAM magnetorresistiva 256Kb 3.3V 35ns 32Kx8 Parallel Memoria RAM magnetorresistiva 137En existencias
Min.: 1
Mult.: 1

BGA-48 Parallel 256 kbit 32 k x 8 8 bit 35 ns 3 V 3.6 V 25 mA, 55 mA - 40 C + 85 C MR256A08B Tray
Everspin Technologies Memoria RAM magnetorresistiva 1Mb 3.3V 128Kx8 Serial Memoria RAM magnetorresistiva 4,090En existencias
Min.: 1
Mult.: 1

DFN-8 SPI 1 Mbit 128 k x 8 8 bit 2.7 V 3.6 V 6 mA, 23 mA - 40 C + 85 C MR25H10 Tray
Everspin Technologies Memoria RAM magnetorresistiva 1Mb 3.3V 128Kx8 SPI 2,021En existencias
Min.: 1
Mult.: 1

DFN-8 SPI 1 Mbit 128 k x 8 8 bit 2.7 V 3.6 V 6 mA, 23 mA - 40 C + 125 C MR25H10 Tray
Everspin Technologies Memoria RAM magnetorresistiva 4Mb 3.3V 35ns 512Kx8 Parallel Memoria RAM magnetorresistiva 938En existencias
Min.: 1
Mult.: 1

TSOP-II-44 Parallel 4 Mbit 512 k x 8 8 bit 35 ns 3 V 3.6 V 30 mA, 90 mA - 40 C + 85 C MR2A08A Tray
Everspin Technologies Memoria RAM magnetorresistiva 4Mb 3.3V 35ns 256Kx16 Prallel Memoria RAM magnetorresistiva 1,156En existencias
Min.: 1
Mult.: 1

TSOP-II-44 Parallel 4 Mbit 256 k x 16 16 bit 35 ns 3 V 3.6 V 55 mA, 105 mA - 40 C + 85 C MR2A16A Tray
Everspin Technologies Memoria RAM magnetorresistiva 16Mb 3.3V 35ns 2Mx8 Parallel Memoria RAM magnetorresistiva 575En existencias
Min.: 1
Mult.: 1

TSOP-II-44 Parallel 16 Mbit 2 M x 8 8 bit 35 ns 3 V 3.6 V 60 mA, 152 mA - 40 C + 85 C MR4A08B Tray
Everspin Technologies Memoria RAM magnetorresistiva 1Mb 3.3V 64Kx16 35ns Parallel Memoria RAM magnetorresistiva 434En existencias
Min.: 1
Mult.: 1

TSOP-II-44 Parallel 1 Mbit 64 k x 16 16 bit 35 ns 3 V 3.6 V 55 mA, 105 mA - 40 C + 85 C MR0A16A Tray
Everspin Technologies Memoria RAM magnetorresistiva 128Kb 3.3V 16Kx8 SPI 1,333En existencias
Min.: 1
Mult.: 1

DFN-8 SPI 128 kbit 16 k x 8 8 bit 2.7 V 3.6 V 6 mA, 23 mA - 40 C + 85 C MR25H128A Tray
Everspin Technologies Memoria RAM magnetorresistiva 256Kb 3.3V 32Kx8 SPI 1,371En existencias
2,280Se espera el 11/11/2026
Min.: 1
Mult.: 1

DFN-8 SPI 256 kbit 32 k x 8 8 bit 2.7 V 3.6 V 6 mA, 23 mA - 40 C + 85 C MR25H256 Tray
Everspin Technologies Memoria RAM magnetorresistiva 256Kb 3.3V 32Kx8 SPI 1,396En existencias
2,280Se espera el 16/12/2026
Min.: 1
Mult.: 1

DFN-8 SPI 256 kbit 32 k x 8 8 bit 2.7 V 3.6 V 6 mA, 23 mA - 40 C + 125 C MR25H256 Tray
Everspin Technologies Memoria RAM magnetorresistiva 4Mb 3.3V 35ns 512Kx8 Parallel Memoria RAM magnetorresistiva 266En existencias
Min.: 1
Mult.: 1

TSOP-II-44 Parallel 4 Mbit 512 k x 8 8 bit 35 ns 3 V 3.6 V 30 mA, 90 mA - 40 C + 125 C MR2A08A Tray
Everspin Technologies Memoria RAM magnetorresistiva 4MB 3.3V 35ns 512K x 8 Memoria RAM magnetorresistiva 296En existencias
Min.: 1
Mult.: 1

TSOP-II-44 Parallel 4 Mbit 256 k x 16 16 bit 35 ns 3 V 3.6 V 55 mA, 105 mA - 40 C + 125 C MR2A16A Tray
Everspin Technologies Memoria RAM magnetorresistiva 4Mb 3.3V 35ns 256Kx16 Prallel Memoria RAM magnetorresistiva 75En existencias
Min.: 1
Mult.: 1

TSOP-II-44 Parallel 4 Mbit 256 k x 16 16 bit 35 ns 3 V 3.6 V 55 mA, 105 mA - 40 C + 105 C MR2A16A Tray
Everspin Technologies Memoria RAM magnetorresistiva 4Mb 3.3V 35ns 256Kx16 Prallel Memoria RAM magnetorresistiva 189En existencias
Min.: 1
Mult.: 1

TSOP-II-44 Parallel 4 Mbit 256 k x 16 16 bit 35 ns 3 V 3.6 V 55 mA, 105 mA 0 C + 70 C MR2A16A Tray
Everspin Technologies Memoria RAM magnetorresistiva 256Kb 3.3V 35ns 32Kx8 Parallel Memoria RAM magnetorresistiva 189En existencias
270Se espera el 15/07/2026
Min.: 1
Mult.: 1

TSOP-II-44 Parallel 256 kbit 32 k x 8 8 bit 35 ns 3 V 3.6 V 25 mA, 55 mA 0 C + 70 C MR256A08B Tray
Everspin Technologies Memoria RAM magnetorresistiva 4Mb 3.3V 512Kx8 SPI Memoria RAM magnetorresistiva 7En existencias
1,140Se espera el 02/12/2026
Min.: 1
Mult.: 1

DFN-8 SPI 4 Mbit 512 k x 8 8 bit 25 ns 3 V 3.6 V 13.8 mA, 33 mA - 40 C + 105 C MR25H40 Tray
Everspin Technologies Memoria RAM magnetorresistiva 16Mb 3.3V 45ns 1Mx16 Parallel Memoria RAM magnetorresistiva 26En existencias
432Se espera el 14/10/2026
Min.: 1
Mult.: 1

TSOP-II-54 Parallel 16 Mbit 1 M x 16 16 bit 45 ns 3 V 3.6 V 60 mA, 152 mA - 40 C + 125 C MR4A16B Tray
Everspin Technologies Memoria RAM magnetorresistiva 4Mb 3.3V 50Mhz 512K x 8 SPI
1,140Se espera el 02/12/2026
Min.: 1
Mult.: 1

DFN-8 SPI 4 Mbit 512 k x 8 8 bit 20 ns 3 V 3.6 V 13.8 mA, 33 mA - 40 C + 85 C MR20H40 Tray
Everspin Technologies Memoria RAM magnetorresistiva 4Mb 3.3V 512Kx8 SPI
3,372En pedido
Min.: 1
Mult.: 1

DFN-8 SPI 4 Mbit 512 k x 8 8 bit 25 ns 3 V 3.6 V 13.8 mA, 33 mA - 40 C + 85 C MR25H40 Tray
Everspin Technologies Memoria RAM magnetorresistiva 4Mb 3.3V 35ns 512Kx8 Parallel Memoria RAM magnetorresistiva
810Se espera el 22/06/2026
Min.: 1
Mult.: 1

TSOP-II-44 Parallel 4 Mbit 512 k x 8 8 bit 35 ns 3 V 3.6 V 30 mA, 90 mA 0 C + 70 C MR2A08A Tray