Vishay SISS7xDN TrenchFET MOSFETs
Vishay SISS7xDN-T1-GE3 TrenchFET MOSFETs use TrenchFET® with ThunderFET technology that optimizes the balance of RDS, QG, QSW, and QOSS. These MOSFETs are 100% Rg and Unclamped Inductive Switching (UIS) tested. The SISS7xDN TrenchFET MOSFETs find applications in primary side switching, synchronous rectification, DC/DC converters, motor drive control, and load switches. These MOSFETs are available in PowerPAK 1212-8S package.
Applications
- Primary side switching
- Synchronous rectification
- DC/DC converter
- Motor drive control
- Load switch
SISS7xDN TrenchFET MOSFETs Circuit Diagram
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| N.º de artículo | Hoja de datos | Descripción | Vds - Tensión disruptiva entre drenaje y fuente | Id - Corriente de drenaje continua | Qg - Carga de puerta | Rds On - Resistencia entre drenaje y fuente | Tipo de transistor |
|---|---|---|---|---|---|---|---|
| SISS72DN-T1-GE3 |  |
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 150V Vds 20V Vgs PowerPAK 1212-8S | 150 V | 25.5 A | 22 nC | 42 mOhms | 1 N-Channel |
| SISS70DN-T1-GE3 | |
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 125V Vds 20V Vgs PowerPAK 1212-8S | 125 V | 31 A | 15.3 nC | 29.8 mOhms | 1 N-Channel |
Publicado: 2018-08-21
| Actualizado: 2023-03-06