ROHM Semiconductor SiC Schottky Barrier Diodes
ROHM Semiconductor® SiC (Silicon Carbide) Schottky Barrier Diodes feature low total capacitive (Qc) that reduces switching loss, enabling high-speed switching operation. In addition, unlike silicon-based fast recovery diodes where the trr increases along with temperature, SiC devices maintain constant characteristics, resulting in better performance. These devices are ideal for use as key devices in a variety of applications, including inverters and chargers for EVs and solar power conditioners.
Multiple package types are offered to suit different requirements for current and power dissipation, such as TO-247, TO-220FM, and TO-220ACP.
Features
- Low switching loss
- Shorter recovery time
- Reduced temperature dependence
- High-speed switching
Applications
- Switch-mode power supplies
- Solar inverters
- UPS
- EV chargers
Associated Products
ROHM Semiconductor Silicon Carbide (SiC) Power Devices
SiC power devices deliver significantly higher performance than the Silicon counterparts.
ROHM Semiconductor AEC-Q101 SiC Schottky Barrier Diodes
Delivers breakdown voltages from 600V, far exceeding the upper limit for silicon SBDs.
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Publicado: 2013-05-02
| Actualizado: 2024-09-06