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onsemi NTTFSxD1N0xHL N-Channel PowerTrench® MOSFETs

onsemi NTTFSxD1N0xHL N-Channel PowerTrench® MOSFETs employ high-performance Shielded Gate MOSFET technology for extremely low RDS(on). These onsemi single-channel MOSFETs offer low switching noises/EMI and 100% UIL-tested MSL1 robust package design. The NTTFSxD1N0xHL MOSFETs are available in a lead-free, halogen-free/BFR-free, and RoHS compliant WDFN8 package. Typical applications include DC−DC buck converters, point of load, high-efficiency load switch and low-side switching, ORing FETs, DC-DC power supplies, and MV synchronous buck converters.

Features

  • High-performance Shielded Gate MOSFET Technology for extremely low RDS(on)
  • Low conduction losses and switching losses
  • MSL1 robust package design
  • 100% UIL tested
  • Lead-free, halogen-free/BFR-free, and RoHS compliant

Applications

  • DC-DC buck converters and DC-DC power supplies
  • ORing FETs and point of loads
  • High-efficiency load switch and low-side switching
  • MV synchronous buck converters

Specifications

  • NTTFS2D1N04HL
    • 2.1mΩ maximum RDS(on) at 10V VGS, 23A ID
    • 3.3mΩ maximum RDS(on) at  4.5V VGS, 18A ID
  • NTTFS3D7N06HL
    • 3.9mΩ maximum RDS(on) at 10V VGS, 233A ID
    • 5.2mΩ maximum RDS(on) at 4.5V VGS, 18A ID
  • NTTFS5D9N08H
    • 5.9mΩ maximum RDS(on) at 10V VGS, 23A ID
    • 9mΩ maximum RDS(on) at 6V VGS, 12A ID

Related MOSFETs

onsemi PowerTrench® MOSFETs

Broad portfolio of N-channel and P-channel versions for low RDS(ON) switching performance.

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N.º de artículo Hoja de datos Descripción
NTTFS3D7N06HLTWG NTTFS3D7N06HLTWG Hoja de datos Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Channel Shielded Gate PowerTrench MOSFET 60 V, 103 A, 3.9 mohm
NTTFS2D1N04HLTWG NTTFS2D1N04HLTWG Hoja de datos Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Channel Shielded Gate PowerTrench MOSFET 40 V, 150 A, 2.1 mohm
NTTFS5D9N08HTWG NTTFS5D9N08HTWG Hoja de datos Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Channel Shielded Gate PowerTrench MOSFET 80 V, 84 A, 5.9 mohm
Publicado: 2020-08-06 | Actualizado: 2024-06-05