onsemi / Fairchild FDD86102 N-Channel PowerTrench® MOSFET

onsemi / Fairchild FDD86102 N-Channel PowerTrench® MOSFET is produced using an advanced PowerTrench process that incorporates shielded gate technology. This MOSFET features fast switching speed and high power and current handling capability in a widely used surface mount package. The onsemi / Fairchild FDD86102 MOSFET is optimized for low rDS(on), switching performance, and ruggedness. Typical application includes DC/DC conversion.

Features

  • Shielded gate MOSFET technology
  • Max rDS(on)=24mΩ at VGS=10V and ID=8A
  • Max rDS(on)=38mΩ at VGS=6V and ID=6A
  • High-performance trench technology for extremely low rDS(on)
  • High power and current handling capability in a widely used surface mount package
  • Very low Qg and Qgd
  • Fast switching speed
  • 100% UIL tested
  • RoHS compliant

Performance Graph

Performance Graph - onsemi / Fairchild FDD86102 N-Channel PowerTrench® MOSFET
Publicado: 2010-08-19 | Actualizado: 2022-03-11