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STMicroelectronics LET RF Power Transistors

STMicroelectronics LET RF Power Transistors are a common source N-Channel enhancement-mode lateral field-effect RF power transistor. These transistors are based on the new advanced STH5P LDMOS technology and are targeted for operation up to 2.0GHz. STMicroelectronics LET RF Power Transistors are specifically designed for 28V (cellular base stations) and 32/36V (avionics) applications. These devices have a significant improvement in terms of RF performance (+3dB gain, +15% efficiency), ruggedness, and reliability makes this new product line ideal in applications such as private mobile radio, government communications, avionics systems, and L-band satellite uplink equipment.

Features

  • > 80V breakdown voltage
  • Up to 36V operating voltage
  • Up to 2GHz operating frequency
  • > 150W @ 32V output power
  • 20:1 all phases load mismatch
  • Enhanced efficiency, gain and power saturation
  • Excellent thermal behavior
  • High ruggedness
  • Improved reliability

Applications

  • Government wideband communications
  • Avionics and radar systems
  • Cellular repeaters
  • Base stations
  • L-band satellite communications
View Results ( 2 ) Page
N.º de artículo Hoja de datos Descripción Potencia de salida
RF3L05150CB4 RF3L05150CB4 Hoja de datos Transistores de efecto de campo de semiconductor de óxido metálico (MOSFET) y radiofrecuencia (RF) 150 W, 28/32 V, HF to 1 GHz RF power LDMOS transistor 150 W
ST9045C ST9045C Hoja de datos Transistores de efecto de campo de semiconductor de óxido metálico (MOSFET) y radiofrecuencia (RF) RF Power LDMOS transistor HF up to 1.5 GHz
Publicado: 2012-02-15 | Actualizado: 2022-06-02