STMicroelectronics STripFET F8 N-Channel Power MOSFETs
STMicroelectronics STripFET F8 N-Channel Power MOSFETs are AEC-Q101 qualified and offer a comprehensive package solution from 30V to 150V to meet all the requirements for very high-power-density solutions. These low-voltage MOSFETs feature STPOWER STripFET F8 technology. STripFET F8 technology saves energy and ensures low noise in power conversion, motor control, and power distribution circuits by cutting both on-resistance and switching losses while optimizing body-diode properties. The STMicroelectronics STripFET F8 N-Channel Power MOSFETs simplify system designs and increase efficiency in applications such as automotive, computer / peripherals, data centers, telecom, solar, power supplies / converters, battery chargers, home / professional appliances, gaming, drones, and more.
Features
- AEC-Q101 qualified (parts ending in AG)
- Very low conduction losses with increased efficiency and more compact designs
- Body diode softness and low gate-drain charge to ensure excellent switching behavior
- Tighter gate threshold voltage spread for easier parallel connections
- Low EMI emissions
- Moisture Sensitivity Level (MSL) 1
- -55°C to +175°C operating temperature range
- 100% avalanche tested
- Wettable flank, PowerFLAT 5mm x 6mm package
- Sustainable technology
Applications
- STL160N10F8
- Server and telecom power
- Industrial battery management system (BMS)
- Power tools
- Drones
- STL170N4LF8 and STL300N4LF8
- Industrial tools, motor drives, and equipment
- Industrial motor control
- Power supplies and converters
- STL175N4LF8AG, STL305N4LF8AG, STL165N4F8AG, and STK615N4F8AG
- Automotive motor control
- Body and convenience
- Chassis and safety
- Power train for ICE
- Switching applications for STL120N10F8, STL320N4LF8, STL325N4LF8AG, and STL325N4LF8AG
Specifications
- 40V or 100V maximum drain-source voltage options
- ±16V or ±20V maximum gate-source voltage options
- 304A to 1492A maximum drain current range
- 111W to 188W total power dissipation range
- Single pulse avalanche
- 60A current
- 140mJ to 590mJ energy range
- Dynamic
- 2600pF to 7657pF input capacitance range
- 680pF to 1968pf output capacitance range
- On/off states
- 1µA to 100µA zero gate voltage drain current range
- 100nA gate-body leakage current
- 1.2V to 4V maximum gate threshold voltage range
- 0.75mΩ to 4.6mΩ maximum static drain-source on-resistance
Videos
Featured MOSFETS
STMicroelectronics STL120N10F8 100V N-Channel STripFET MOSFET
The device utilizes ST's STripFET F8 technology featuring an enhanced trench gate structure.
STMicroelectronics STL325N4LF8AG N-Channel Power MOSFET
Utilizes STripFET F8 technology and features an enhanced trench gate structure.
STMicroelectronics STL320N4LF8 N-Channel STripFET F8 Power MOSFET
Manufactured with STripFET F8 trench MOSFET technology.
Related Products
STMicroelectronics Power MOSFETs
Broad range of breakdown voltages from -500V to 1500V.
STMicroelectronics STripFET Power MOSFETs
High current and low RDS(on) required by automotive and industrial switching applications.
STMicroelectronics EVLSERVO1 STSPIN32G4-Based Reference Design
A compact reference design for driving low-voltage, high-current servo motors.
Complete Your Design
STMicroelectronics Standard Products
A broad range of drop-in replacements for general-purpose analog ICs, discretes, and serial EEPROMs.