STMicroelectronics 650V 3rd Gen SiC MOSFETs
STMicroelectronics 650V 3rd Generation Silicon Carbide (SiC) MOSFETs feature low on-state resistance (RDS(on)) per area, even at high temperatures, and excellent switching performance. This translates into more efficient and compact systems. The SiC MOSFETs feature excellent switching performance over IGBTs, simplifying the thermal design of power electronic systems. These 650V SiC MOSFETs have been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The low RDS(on), low capacitances, and high switching operations improve application performance in frequency, energy efficiency, system size, and weight reduction.
Features
- High-temperature handling capability
- Significantly reduced switching losses (minimal variation vs. temperature), resulting in more compact designs with smaller passive components
- Low RDS(on) offers higher system efficiency thanks to reduced cooling requirements
- Simple to drive and cost-effective network driving
- Fast and robust intrinsic body diode means no need for external freewheeling diode, resulting in more compact systems
- AEC-Q101 qualified available
Applications
- Automotive
- Main inverters (electric traction)
- DC/DC converter for EVs/HEVs
- Onboard chargers (OBC)
- Switching
- Power supplies for renewable energy systems
- High frequency DC-DC converters
Videos
SiC MOSFET Range
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STMicroelectronics 750V/1200V 4th Gen SiC MOSFETs
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Publicado: 2019-01-16
| Actualizado: 2024-09-26