ROHM Semiconductor UT6J Pch Power MOSFETs
ROHM Semiconductor UT6J Pch Power MOSFETs feature low on-resistance and are housed in a high power small mold package. ROHM offers a wide voltage lineup from small signal products to 800V high voltage products. They can be used for various applications like power supplies and motor drive circuits.Features
- Low on-resistance
- Small surface mount package
- Pb-free plating; RoHS compliant
- Halogen Free
Applications
- Switching
Lineup
Market Applications
Improved ON Resistance
Additional Resources
View Results ( 5 ) Page
| N.º de artículo | Hoja de datos | Descripción | Vds - Tensión disruptiva entre drenaje y fuente | Id - Corriente de drenaje continua | Rds On - Resistencia entre drenaje y fuente |
|---|---|---|---|---|---|
| UT6K3TCR1 | ![]() |
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) DFN2020 2NCH 30V 5.5A | 30 V | 5.5 A | 42 mOhms |
| UT6J3TCR1 | ![]() |
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) DFN2020 2PCH 20V 3A | 20 V | 2 A | 85 mOhms |
| UT6JB5TCR | ![]() |
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) DFN2020 2PCH 40V 3.5A | 40 V | 3.5 A | 122 mOhms |
| UT6KE5TCR | ![]() |
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 100V 2.0A Dual Nch+Nch, DFN2020-8D, Power MOSFET | 100 V | 2 A | 207 mOhms |
| UT6JC5TCR | ![]() |
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) -60V Dual Pch+Pch, DFN2020, Power MOSFET | 60 V | 2.5 A | 280 mOhms |
Publicado: 2021-01-26
| Actualizado: 2023-09-07

