ROHM Semiconductor RFUH25TB3SNZ Super Fast Recovery Diode
ROHM Semiconductor RFUH25TB3SNZ Super Fast Recovery Diode features ultra-low switching loss and high current overload capacity. This recovery diode includes silicon epitaxial planar type construction. The RFUH25TB3SNZ recovery diode offers 350V repetitive peak reverse voltage, 10μA reverse current, and 100A non-repetitive forward surge current. This recovery diode operates at 1.45V maximum forward voltage and stored at -55°C to 150°C temperature range. The RFUH25TB3SNZ super-fast recovery diode is ideal for use in general rectification.
Features
- Ultra-low switching loss
- High current overload capacity
- Silicon epitaxial planar type construction
- 350V repetitive peak reverse voltage
- 10μA reverse current
- 100A non-repetitive forward surge current
- 1.45V maximum forward voltage
- -55°C to 150°C storage temperature range
Applications
- General rectification
Mechanical Drawing
Publicado: 2021-02-26
| Actualizado: 2022-03-11