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onsemi GaNEXUS™ GaN FETs

onsemi GaNEXUS™ Gallium Nitride Field-Effect Transistors (GaN FETs) use wide-bandgap material properties of GaN to deliver fast switching, low gate and output charge, and enhanced efficiency compared to silicon power transistors. These features enable higher operating frequencies, increased power density, and reduced magnetics in power conversion applications across low-, medium-, high-, and ultra-high voltages. The enhancement-mode discrete GaN high-electron-mobility transistors (HEMTs) offer a voltage range from 40V to 650V, including 650V GaNEXUS Smart GaN FETs with integrated protections to improve reliability and simplify system integration. Ideal applications for the onsemi GaNEXUS family include industrial automation, robotics, AI data centers, automotive electrification, and energy infrastructure.

Features

  • Fast switching, low gate and output charge, and superior efficiency compared to silicon power transistors
  • Lower switching losses
  • Higher power density for smaller magnetics, compact designs, and greater integration
  • Improved thermal performance
  • Voltage range from 40V to 650V and 650V
  • Integrated protection features
  • High-frequency performance offers faster switching for advanced conversion stages
  • Thermally enhanced packages
  • Industry-standard footprints for dual sourcing
  • Made for deployment-ready systems

Applications

  • Automotive electrification
  • Industrial automation
  • AI data center and cloud infrastructure
  • Physical AI, robotics, and industrial power
  • Energy infrastructure

GaN Power Conversion Architecture

Infographic - onsemi GaNEXUS™ GaN FETs

Additional Resources

View Results ( 7 ) Page
N.º de artículo Hoja de datos Paquete / Cubierta Id - Corriente de drenaje continua Dp - Disipación de potencia Qg - Carga de puerta Rds On - Resistencia entre drenaje y fuente
NTD100N70GN1TXG NTD100N70GN1TXG Hoja de datos DPAK-3 21 A 105 W 3.8 nC 100 mOhms
NTMT100N70GN1TXG NTMT100N70GN1TXG Hoja de datos DFN-9 21 A 111 W 3.8 nC 100 mOhms
NTMT130N70GN1TXG NTMT130N70GN1TXG Hoja de datos DFN-9 16 A 84 W 2.65 nC 130 mOhms
NTD170N70GN1TXG NTD170N70GN1TXG Hoja de datos PDSO-E3 12 A 64 W 2.1 nC 170 mOhms
NTMT170N70GN1TXG NTMT170N70GN1TXG Hoja de datos DFN-9 12 A 69 W 2.1 nC 170 mOhms
NTLCC3D5N10GN1TWG NTLCC3D5N10GN1TWG Hoja de datos PTFP-N9 183 A 250 W 7.3 nC 2.7 mOhms
NTLCC5D0N10GN1TWG NTLCC5D0N10GN1TWG Hoja de datos PTFP-N9 146 A 208 W 5.2 nC 3.8 mOhms
Publicado: 2026-06-17 | Actualizado: 2026-07-13