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onsemi FDMS4D5N08LC 80V Single N-Channel Power MOSFET

onsemi FDMS4D5N08LC 80V Single N-Channel Power MOSFET is produced using an advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with a soft body diode.

The FDMS4D5N08LC MOSFET is offered in a Power Quad Flat No-lead (PQFN) package and is Pb-free, halide-free, and RoHS-compliant.

Features

  • Shielded gate MOSFET technology
  • Max RDS(on) = 4.2mΩ at VGS = 10V, ID = 37A
  • Max RDS(on) = 6.1mΩ at VGS = 4.5V, ID = 29A
  • 80V drain-to-source voltage (VDS) at continuous TC = +25°C
  • 116A drain current (ID) 
  • Low 38nC (typical) reverse recovery charge (Qrr)
  • Lowers switching noise/EMI
  • MSL1 robust package design
  • Logic-level drive capable
  • 100% UIL tested
  • -55°C to +150°C operating junction temperature range
  • PQFN-8 package type
  • 5mm x 6mm package dimensions
  • Pb-free, Halide-free, and RoHS-compliant

Applications

  • Primary DC-DC MOSFETs
  • Synchronous rectifiers in DC-DC and AC-DC
  • Motor drives
  • Solar

Internal Schematic

Schematic - onsemi FDMS4D5N08LC 80V Single N-Channel Power MOSFET

Package Outline

Mechanical Drawing - onsemi FDMS4D5N08LC 80V Single N-Channel Power MOSFET

Related Products

onsemi PowerTrench® MOSFETs

Broad portfolio of N-channel and P-channel versions for low RDS(ON) switching performance.

Learn Moreacerca de onsemi PowerTrench® MOSFETs View Productsrelacionado con onsemi PowerTrench® MOSFETs
Publicado: 2019-08-15 | Actualizado: 2024-02-21