Nexperia NGWx Trench Field-Stop IGBTs

Nexperia NGWx Trench Field-Stop Insulated-Gate Bipolar Transistors (IGBTs) feature third-generation technology and combine carrier-stored trench-gate and field-stop (FS) structures. Rated up to 175°C, the IGBTs offer optimized IGBT turn-off losses with a 5μs short circuit withstand time. These hard-switching 600V and 30A IGBTs are optimized for high-voltage, low-frequency industrial power inverter, and servo motor drive applications.

Features

  • Collector current (IC) rated up to 75A
  • Low conduction and switching losses
  • Stable and tight parameters for easy parallel operation
  • Fully rated as a soft fast reverse recovery diode
  • Maximum junction temperature of 175°C
  • RoHS-compliant, lead-free plating

Applications

  • Motor drives for industrial and consumer appliances, specifically servo motors operating between 5kW to 20kW (up to 20kHz)
    • Robotics
    • Elevators
    • Operating grippers
    • In-line manufacturing
  • Power inverters
    • Uninterruptible Power Supply (UPS) inverters
    • Photovoltaic (PV) strings
    • EV charging
  • Induction heating
  • Welding

Videos

Pin Information

Mechanical Drawing - Nexperia NGWx Trench Field-Stop IGBTs
Publicado: 2023-08-01 | Actualizado: 2025-04-03