Mini-Circuits TAV1-551+ Ultra-Low-Noise E-PHEMT Transistor
Mini-Circuits TAV1-551+ Ultra-Low-Noise E-PHEMT Transistor is a low noise, high gain device manufactured using E-PHEMPT technology enabling it to work with a single positive supply voltage. A small footprint saves space in dense layouts while providing low inductance, repeatable transitions, and excellent thermal contact to the PCB. It features an outstanding Noise figure, particularly below 2.5GHz, and when combining this noise figure with gain in a single device it makes it an ideal amplifier for multiple applications.
Features
- Ultra-low noise
- Low current
- High OIP3
- RoHS compliant
- Small size, MCLP package
- Wide bandwidth
- Externalbiasing and matching required
Applications
- Cellular
- ISM
- GSM
- WCDMA
- WiMax
- WLAN
- UNII and HIPERLAN
Specifications
- 0.5dB typical to 0.9GHz noise
- 20.9dB typical at 0.9GHz gain
- +22dBm typical at 0.9GHz OIP3
- 0.22V to 0.46V operational gate voltage
- 0.18V to 0.38V threshold voltage
- 5.0µA maximum saturated drain current
- 95µA maximum gate leakage current
- 5V maximum drain-source voltage
- -5V to 0.7V maximum gate-source and gate-drain voltage range
- 100mA maximum drain current
- 2mA maximum gate current
- 360mW maximum total dissipated power
- 17dBm RF input power
- +160°C/W maximum thermal resistance
- Temperature
- +150°C channel temperature
- -40°C to +85°C operating range
- -65°C to +150°C storage range
Publicado: 2021-03-10
| Actualizado: 2022-03-11