Micron DDR4 SDRAM Memory

Micron DDR4 (Double Data Rate 4) SDRAM is a high-speed dynamic random-access memory internally configured as an 8-bank DRAM for the x16 configuration and as a 16-bank DRAM for the x4 and x8 configurations. These high-density devices enable system designers to take advantage of more available memory with the same number of placements, which can help to increase the bandwidth or supported feature set of a system. DDR4 memory can also enable designers to maintain the same density with fewer placements, which helps to reduce costs.

Micron DDR4 SDRAM Memory is rigorously tested for the extreme temperature and performance needs of industrial and automotive applications.


  • Optimized for cost/performance/capacity and data rates up to 3200Mb/s
  • Increases bandwidth up to 50% over DDR3
  • Low 1.2V voltage drain (Core and I/O) reduces memory power demand
  • Power-saving features can reduce total overall power requirements by 35% over DDR3
  • Connectivity Test mode enables early fault detection during system test for reduced debug time, saving development and production costs
  • Center bond pads for highest performance and lowest cost
  • Improved data signal integrity and system reliability; ODT, DBI, Command/Address Parity, and CRC
  • Supports up to 16Gb single-die density
  • Multi-rank package support
  • Higher capacity memory subsystem with up to 4-die stacking
  • Available in FBGA-78 and FBGA-98 packages
  • Operating temperature options
    • 0°C to +95°C
    • -40°C to +95°C
    • -40°C to +105°C
    • -40°C to +125°C


  • Cloud servers and datacenters
  • Automotive
  • Interactive wellness coaching and personalized health monitoring
  • Industrial IoT and Industry 4.0
  • Gaming PCs
  • Edge and video surveillance servers

DDR4 vs DDR3 Comparison

Chart - Micron DDR4 SDRAM Memory
Publicado: 2021-11-12 | Actualizado: 2022-03-11