IXYS LSIC1MO170E0750 N-Channel SiC MOSFET
IXYS LSIC1MO170E0750 is a 750mΩ N-channel Silicon Carbide (SiC) MOSFET optimized for high-frequency and high-efficiency applications. The low gate resistance and ultra-low on-resistance make it suitable for high-frequency switching applications. This device features extremely low gate charge and output capacitance, as well as normally-off operations at all temperatures. The IXYS LSIC1MO170E0750 is suitable for a variety of applications that utilize high-frequency switching, such as switch-mode power supplies, solar inverters, UPS systems, high voltage DC-DC converters, and more.Features
- Optimized for high-frequency and high-efficiency applications
- Extremely low gate charge and output capacitance
- Low gate resistance for high-frequency switching
- Normally-off operations at all temperatures
- Ultra-low on-resistance
Applications
- High-frequency applications
- Solar inverters
- Switch mode power supplies
- Uninterruptible power supplies (UPS)
- Motor drives
- High voltage DC-DC converters
- Battery chargers
- Induction heating
Specifications
- 1700VDS
- Up to 6.2A of continuous drain current
- 29Ω gate resistance
- 750mΩ RDS(ON)
- Up to 60W power dissipation
- -5VDC to +20VDC recommended gate-source voltage, -6VDC to +22VDC maximum
Dimensions & Pin-Out
Publicado: 2021-06-08
| Actualizado: 2022-03-11
