Volver a Infineon Technologies

Infineon Technologies OptiMOS™ Fast Diode (FD) Power MOSFETs

Infineon OptiMOS™ Fast Diode (FD) devices are Infineon's latest generation N-channel power MOSFETs in 200V and 250V options. These Infineon OptiMOS FD devices feature reduced Qrr, very low on-resistance, and 175ºC operating temperature. These Infineon OptiMOS FD MOSFETs are optimized for body diode hard commutation and ideal for applications such as telecom, industrial power supplies, Class D audio amplifiers, motor control, and DC/AC inverter.

Features

  • N-channel, normal level
  • Fast diode (FD) with reduced Qrr
  • Optimized for hard commutation ruggedness
  • Low ON-resistance RDS(on)
  • 175°C maximum operating temperature
  • Pb-free lead plating, RoHS compliant
  • Qualified, according to JEDEC for target application
  • Halogen free, according to IEC61249-2-21

Applications

  • Telecom
  • Class D audio amplifiers
  • Motor control for 48-110V systems
  • Industrial power supplies
  • DC/AC inverters

Related Products

Infineon Technologies N-Channel OptiMOS™ Power MOSFETs

Ultra low gate and output charges with lowest on state resistance in small footprint packages.

Learn Moreacerca de Infineon Technologies N-Channel OptiMOS™ Power MOSFETs View Productsrelacionado con Infineon Technologies N-Channel OptiMOS™ Power MOSFETs

Infineon Power and Sensing Selection Guide

Publicado: 2014-06-02 | Actualizado: 2022-03-11