Infineon Technologies F3L200R07W2S5FP EasyPACK™ IGBT Modules
Infineon Technologies F3L200R07W2S5FP EasyPACK™ IGBT Modules feature up to 650V increased blocking voltage capability and employ CoolSiC™ Schottky diode (gen5). These devices are based on TRENCHSTOP™ IGBT5 and PressFIT contact technology. The F3L200R07W2S5FP IGBT modules provide strongly reduced switching losses and an Al2O3 substrate with low thermal resistance. These modules come with a compact design comprising rugged mounting due to integrated mounting clamps and pre-applied thermal interface material. The F3L200R07W2S5FP IGBT modules are ideal for motor drives, solar applications, 3-level applications, and UPS systems.
Features
- CoolSiC Schottky diode (gen 5)
- Increased blocking voltage capability up to 650V
- Low switching losses
- compact design
- Al2O3 substrate with low thermal resistance
- PressFIT contact technology
- Rugged mounting due to integrated mounting clamps
- Pre-applied thermal interface material
Applications
- Motor drives
- Solar
- 3-level applications
- UPS systems
Circuit Diagrams
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Selection Guide
View Results ( 3 ) Page
| N.º de artículo | Hoja de datos | Descripción | Tipo de producto | Cantidad de Paquete Estándar |
|---|---|---|---|---|
| F3L200R07W2S5FB11BOMA1 |  |
Módulos IGBT 650 V, 200 A 3-level IGBT module | IGBT Modules | 15 |
| F3L200R07W2S5FPB55BPSA1 | Módulos IGBT 650 V, 200 A 3-level IGBT module | IGBT Modules | 18 | |
| F3L200R07W2S5FPB56BPSA1 | Módulos IGBT 650 V, 200 A 3-level IGBT module | IGBT Modules | 18 |
Publicado: 2020-05-11
| Actualizado: 2024-10-24