Infineon Technologies CoolSiC™ 440V G2 Silicon Carbide MOSFETs
Infineon Technologies CoolSiC™ 440V G2 Silicon Carbide MOSFETs are designed to bridge the gap between 200V Si trench MOSFETs and 600V Si Super junction (SJ) MOSFETs. These MOSFETs deliver outstanding power density and system efficiency in 2 and 3-level using hard and soft-switching topologies. The CoolSiC™ MOSFETs feature 440V blocking voltage, 4.5V gate threshold voltage, and low RDS(ON) temperature dependency. These MOSFETs combine high robustness with ultra-low switching losses and on-state resistance. The CoolSiC™ MOSFETs are ideal for application specific MOSFET designed to power AI, high-power SMPS for server, datacenter, and telecom rectifiers.
Features
- 440V blocking voltage
- 4.5V gate threshold voltage
- Support for unipolar driving (VGSoff=0)
- Lower FOMs compared to 650V SiC MOSFETs
- High system efficiency
- High power density designs
- High design robustness
- Reduced EMI filtering
- Fast commutation proof low Qfr body diode
- Low RDS(on) temperature dependency
- Highly controllable
- Low Voff overshoot during high dV/dt operation
- Use in hard-switching topologies
Applications
- Application specific MOSFET designed to power AI
- High-power SMPS for server
- Datacenter
- Telecom rectifiers
Cell Structure
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