Infineon Technologies CY15B104Q 4-Mbit Serial SPI F-RAM

Infineon Technologies CY15B104Q 4-Mbit Serial SPI F-RAM is a 4-Mbit non-volatile ferroelectric random access memory (F-RAM) logically organized as 512K×8. F-RAM is non-volatile and performs reads and writes similar to a RAM with reliable data retention of 151 years. The Infineon CY15B104Q eliminates the complexities, overhead, and system-level reliability problems caused by serial flash, EEPROM, and other non-volatile memories.

Features

  • 4-Mbit ferroelectric random access memory (F-RAM) logically organized as 512Kx8
  • High-speed serial peripheral interface (SPI)
  • Sophisticated write protection scheme
  • Low power consumption
  • 2V to 3.6VDD low-voltage operation 
  • –40°C to 85°C industrial temperature 
  • Packages: 8-pin small outline integrated circuit (SOIC) package, 8-pin thin dual flat no leads (TDFN) package
  • Restriction of hazardous substances (RoHS) compliant

Logical Block Diagram

Block Diagram - Infineon Technologies CY15B104Q 4-Mbit Serial SPI F-RAM
Publicado: 2016-07-19 | Actualizado: 2024-11-18