GeneSiC Semiconductor 650V, 1200V, & 1700V SiC Schottky MPS™ Diodes
GeneSiC Semiconductor 650V, 1200V, and 1700V SiC Schottky MPS™ Diodes provide low standby power losses and improved circuit efficiency. The 650V SiC Diodes have a forward current range of 6A to 20A. The 1200V SiC Diodes have a forward current range of 1A to 200A. The 1700V SiC Diodes have a forward current range of 5A to 50A.
All the 650V, 1200V, and 1700V SiC Schottky Diodes offer the advantage of paralleling devices without a thermal runaway. Additional features include low reverse recovery current, low device capacitance, and low reverse leakage current.
The SiC Schottky MPS Diodes are ideal for a wide range of applications including LED lighting, medical imaging systems, high voltage sensing, and electric vehicles.
Features
- High avalanche (UIS) capability
- Enhanced surge current capability
- Superior figure of merit QC/IF
- Low thermal resistance for faster heat dissipation
- 175°C Maximum operating temperature
- Temperature independent switching behavior
- Positive temperature coefficient of VF
- Extremely fast switching speeds
Applications
- Boost diode in power factor correction (PFC)
- Switched mode power supplies (SMPS)
- AC-DC converters & DC-DC converters
- Freewheeling / anti-parallel diode in inverters
- Uninterruptible power supplies (UPS)
- Solar inverters & wind energy converters
- Induction heating & welding
- Electric vehicles (EVs) & DC fast chargers
- Motor drives
- LED and HID Lighting
- Medical imaging systems
- High voltage sensing
- Pulsed power
Additional Resources
Associated Products
GeneSiC Semiconductor 650V SiC Schottky MPS™ Diodes
Combines excellent forward and switching characteristics with robustness and thermal conductivity.
GeneSiC Semiconductor 1200V SiC Schottky MPS™ Diodes
Offers system efficiency and high system reliability and a forward current range of 300mA to 100A.
GeneSiC Semiconductor 1700V SiC Schottky MPS™ Diode
High-temperature operation with low power losses, 5A forward current, and 149W power dissipation.
GeneSiC Semiconductor 4th Generation SiC Schottky MPS™ Diodes
Thin Chip Technology for low VF, enhanced surge and avalanche robustness, and a superior FOM.
Navitas Semiconductor Circuitos integrados de potencia GanFast™ y tecnología GaNSense™.
Incorporan funciones de control, accionamiento, detección y protección para aplicaciones en cargadores y adaptadores de alta densidad.