GeneSiC Semiconductor SiC MOSFETs
GeneSiC Semiconductor’s G3R™ Silicon Carbide (SiC) MOSFETs offer RDS(ON) levels from 12mΩ to 1000mΩ and robustness for efficiency and system reliability in automotive and industrial applications. These MOSFETs deliver a fast switching frequency, increased power density, reduced ringing (EMI), and a compact size. The G3R SiC MOSFETs are offered in optimized low-inductance discrete packages (SMD and through-hole). The modules are highly optimized for power system designs that require elevated efficiency levels at all operating temperatures and ultra-fast switching speeds with ultra-low losses. GeneSiC SiC MOSFETs provide faster switching and lower ON resistance than silicon-based products. Additional features include superior electric characteristics at high temperatures and significantly lower switching loss, allowing smaller peripheral components to be used.
Features
- G3R technology with 15V gate drive voltage
- Softer temperature dependence of RDS(ON)
- Superior QG x RDS(ON) figure of merit
- Low QG and low RG(INT) for faster low-loss switching
- Low capacitances (COSS and CRSS) for reduced ringing
- Electromagnetically optimized design and assembly for lower ringing
- Superior cost-performance index
- Advanced packaging technology for better thermal performance
- Better short circuit withstand capability
- Superior avalanche (UIL) ruggedness for fail-safe designs
- 100% UIL tested during production
Applications
- Solar inverters
- EV chargers
- Server and Telecom Power
- Servo Drives
- Traction
- Uninterruptible power supplies (UPS)
- Energy storage
Specifications
- 650V to 3300V drain-source breakdown voltage (Vds)
- 2A to 150A continuous drain current (Id)
- 12mΩ to 1000mΩ drain-source resistance (RDS(ON))
- -55°C to +175°C operating temperature range
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