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Everspin Technologies MR4A08B & MR4A16B 16Mb Parallel MRAMs

Everspin Technologies MR4A08B and MR4A16B 16Mb Parallel MRAM devices provide SRAM compatible 35ns read/write timing with unlimited endurance. The Everspin Technologies MR4A08B is a 16,777,216-bit Magnetoresistive Random Access Memory (MRAM) device organized as 2,097,152 words of 8 bits. 

The Everspin Technologies MR4A16B is organized as 1,048,576 words of 16 bits. For both MRAM devices, data is non-volatile for greater than 20-years. Data is automatically protected on power loss by low voltage inhibit circuitry to prevent writes with voltage out of specification. 

The MR4A08B is available in small footprint 400-mil, 44-lead plastic small-outline TSOP type-II package or 10mm x 10mm, 48pin ball grid array (BGA) package with 0.75mm ball centers. The MR4A16B is available in small footprint 48pin ball grid array (BGA) package and a 54-pin Thin Small Outline Package (TSOPII). 

Both products provide highly reliable data storage over a wide range of temperatures. They are offered with commercial temperature (0 to 70°C), industrial temperature (-40 to 85°C), and automotive temperature (-40 to 125°C) range options.

Features

  • +3.3V power supply
  • Fast 35ns read/write cycle
  • SRAM compatible timing
  • Unlimited read and write endurance
  • Data always non-volatile for >20 years at a temperature
  • RoHS-compliant small footprint BGA and TSOP package

Block Diagrams

Block Diagram - Everspin Technologies MR4A08B & MR4A16B 16Mb Parallel MRAMs
Block Diagram - Everspin Technologies MR4A08B & MR4A16B 16Mb Parallel MRAMs

Associated Products

Everspin Technologies Magnetoresistive Random Access Memory (MRAM)

Delivers significantly long data retention of >20 years and unlimited endurance.

Learn Moreacerca de Everspin Technologies Magnetoresistive Random Access Memory (MRAM) View Productsrelacionado con Everspin Technologies Magnetoresistive Random Access Memory (MRAM)
View Results ( 19 ) Page
N.º de artículo Hoja de datos Serie Descripción
MR4A16BMA35 MR4A16BMA35 Hoja de datos MR4A16B Memoria RAM magnetorresistiva 16Mb 3.3V 35ns 1Mx16 Parallel Memoria RAM magnetorresistiva
MR4A08BCMA35 MR4A08BCMA35 Hoja de datos MR4A08B Memoria RAM magnetorresistiva 16MB 3.3V 35ns 2Mx8 Parallel Memoria RAM magnetorresistiva
MR4A08BUYS45 MR4A08BUYS45 Hoja de datos MR4A08B Memoria RAM magnetorresistiva 16Mb 3.3V 45ns 2Mx8 Parallel Memoria RAM magnetorresistiva
MR4A16BCMA35 MR4A16BCMA35 Hoja de datos MR4A16B Memoria RAM magnetorresistiva 16Mb 3.3V 35ns 1Mx16 Parallel Memoria RAM magnetorresistiva
MR4A16BUYS45 MR4A16BUYS45 Hoja de datos MR4A16B Memoria RAM magnetorresistiva 16Mb 3.3V 45ns 1Mx16 Parallel Memoria RAM magnetorresistiva
MR4A16BUYS45R MR4A16BUYS45R Hoja de datos MR4A16B Memoria RAM magnetorresistiva 16Mb 3.3V 45ns 1Mx16 Parallel Memoria RAM magnetorresistiva
MR4A08BCYS35 MR4A08BCYS35 Hoja de datos MR4A08B Memoria RAM magnetorresistiva 16Mb 3.3V 35ns 2Mx8 Parallel Memoria RAM magnetorresistiva
MR4A08BYS35 MR4A08BYS35 Hoja de datos MR4A08B Memoria RAM magnetorresistiva 16Mb 3.3V 35ns 2Mx8 Parallel Memoria RAM magnetorresistiva
MR4A16BCYS35 MR4A16BCYS35 Hoja de datos MR4A16B Memoria RAM magnetorresistiva 16Mb 3.3V 35ns 1Mx16 Parallel Memoria RAM magnetorresistiva
MR4A16BCYS35R MR4A16BCYS35R Hoja de datos MR4A16B Memoria RAM magnetorresistiva 16Mb 3.3V 35ns 1Mx16 Parallel Memoria RAM magnetorresistiva
Publicado: 2011-08-02 | Actualizado: 2022-03-11