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Everspin Technologies MR25Hxx Serial SPI MRAMs

Everspin Technologies MR25Hxx Serial SPI MRAMs offer serial EEPROM and serial Flash compatible read/write timing with no write delays and unlimited read/write endurance. Unlike other serial memories, both reads and writes can occur randomly in memory with no delay between writes. 

These Everspin MRAM devices are an ideal memory solution for applications that must store and retrieve data and programs quickly using a small number of I/O pins. The Serial MRAM devices are available in either a 5mm x 6mm 8-pin DFN package or a 5mm x 6mm 8-pin DFN Small Flag package. Both are compatible with serial EEPROM, Flash, and FeRAM products. 

The MR25H128A Series is a 128Kb device organized as 16,384 words of 8 bits. MR25H128A offers serial EEPROM and serial Flash compatible read/write timing with no write delays and unlimited read/write endurance. MR25H256A is a 262,144-bit device organized as 32,768 words of 8 bits. MR25H256A offers serial EEPROM and serial Flash compatible read/write timing with no write delays and unlimited read/write endurance.

The MR25H40 provides highly reliable data storage over a wide range of temperatures. The product is offered with industrial (-40°C to +85°C) and AEC-Q100 Grade 1 (-40°C to 125°C) operating temperature range options.

Features

  • MR25H40:
    • 4,194,304-bit magnetoresistive (MRAM) device organized as 524,288 words of 8 bits
    • No write delays
    • Unlimited write endurance
    • Data retention greater than 20 years
    • Automatic data protection on power loss
    • Fast, simple SPI interface with up to 40 MHz clock rate
    • 3.0 to 3.6 Volt power supply range
    • Low current sleep mode
    • Industrial temperatures
    • Available in 8-pin DFN or 8-pin DFN Small Flag RoHS-compliant packages
    • Direct replacement for serial EEPROM, Flash, FeRAM
       
  • MR25H10:
    • 1,048,576-bit magnetoresistive (MRAM) device organized as 131,072 words of 8 bits
    • Serial SPI MRAM
    • Organized as 131,072 words of 8 bits
    • Serial EEPROM and serial Flash compatible read/write timing
    • No write delays
    • Unlimited write endurance
    • Data retention greater than 20 years
    • Automatic data protection on power loss
    • Fast, simple SPI interface with up to 40 MHz clock rate
    • 2.7 to 3.6V power supply range
    • 3μA sleep mode standby current
    • Industrial, automotive temperatures
    • Small footprint 8-pin DFN RoHS-compliant package
    • Direct replacement for serial EEPROM, Flash, FeRAM
  • MR25H256:
    • 262,144-bit magnetoresistive MRAM organized as 32,7568 words of 8-bits
    • No write delays
    • Unlimited write endurance
    • Data retention greater than 20 years
    • Automatic data protection on power loss
    • Block write protection
    • Fast, simple SPI interface with up to 40MHz clock rate
    • 2.7 to 3.6 Volt power supply range
    • Low current sleep mode
    • Industrial temperatures
    • Available in 8-pin DFN or 8-pin DFN Small Flag RoHS-compliant packages
    • Direct replacement for serial EEPROM, Flash, FeRAM
       
  • MR25H128:
    • No write delays
    • Unlimited write endurance
    • Data retention greater than 20 years
    • Automatic data protection on power loss
    • Block write protection
    • Fast, simple SPI interface with up to 40MHz clock rate
    • 2.7 to 3.6V power supply range
    • Low current sleep mode
    • Industrial and Automotive temperatures
    • Available in 8-pin DFN Small Flag RoHS-compliant package
    • Direct replacement for serial EEPROM, Flash, FeRAM
    • Industrial Grade and AEC-Q100 Grade 1 and Grade 3 options
    • Moisture Sensitivity MSL-3

Block Diagrams

Block Diagram - Everspin Technologies MR25Hxx Serial SPI MRAMs
Block Diagram - Everspin Technologies MR25Hxx Serial SPI MRAMs
Block Diagram - Everspin Technologies MR25Hxx Serial SPI MRAMs
Block Diagram - Everspin Technologies MR25Hxx Serial SPI MRAMs

Associated Products

Mikroe MIKROE-2914 MRAM Click

Features MRAM module with 262,144 magnetoresistive memory cells, organized into 32,768 bytes.

Learn Moreacerca de Mikroe MIKROE-2914 MRAM Click View Productsrelacionado con Mikroe MIKROE-2914 MRAM Click

Everspin Technologies MR4A08B & MR4A16B 16Mb Parallel MRAMs

Provides SRAM compatible 35ns read/write timing with unlimited endurance.

Learn Moreacerca de Everspin Technologies MR4A08B & MR4A16B 16Mb Parallel MRAMs View Productsrelacionado con Everspin Technologies MR4A08B & MR4A16B 16Mb Parallel MRAMs

Everspin Technologies Magnetoresistive Random Access Memory (MRAM)

Delivers significantly long data retention of >20 years and unlimited endurance.

Learn Moreacerca de Everspin Technologies Magnetoresistive Random Access Memory (MRAM) View Productsrelacionado con Everspin Technologies Magnetoresistive Random Access Memory (MRAM)
View Results ( 17 ) Page
N.º de artículo Hoja de datos Serie Descripción
MR25H128AMDF MR25H128AMDF Hoja de datos MR25H128A Memoria RAM magnetorresistiva 128Kb 3.3V 16Kx8 SPI
MR25H10CDF MR25H10CDF Hoja de datos MR25H10 Memoria RAM magnetorresistiva 1Mb 3.3V 128Kx8 Serial Memoria RAM magnetorresistiva
MR25H10MDF MR25H10MDF Hoja de datos MR25H10 Memoria RAM magnetorresistiva 1Mb 3.3V 128Kx8 SPI
MR25H256ACDFR MR25H256ACDFR Hoja de datos MR25H256 Memoria RAM magnetorresistiva 256Kb 3.3V 32Kx8 SPI
MR25H256AMDF MR25H256AMDF Hoja de datos MR25H256 Memoria RAM magnetorresistiva 256Kb 3.3V 32Kx8 SPI
MR25H128ACDF MR25H128ACDF Hoja de datos MR25H128A Memoria RAM magnetorresistiva 128Kb 3.3V 16Kx8 SPI
MR25H256ACDF MR25H256ACDF Hoja de datos MR25H256 Memoria RAM magnetorresistiva 256Kb 3.3V 32Kx8 SPI
MR25H40CDF MR25H40CDF Hoja de datos MR25H40 Memoria RAM magnetorresistiva 4Mb 3.3V 512Kx8 SPI
MR25H40CDFR MR25H40CDFR Hoja de datos MR25H40 Memoria RAM magnetorresistiva 4Mb 3.3V 512Kx8 SPI
MR25H128ACDFR MR25H128ACDFR Hoja de datos MR25H128A Memoria RAM magnetorresistiva 128Kb 3.3V 16Kx8 SPI
Publicado: 2011-08-03 | Actualizado: 2022-03-11