GNP2x 650V Enhancement Mode GaN HEMTs
ROHM Semiconductor GNP2x 650V Enhancement Mode GaN High-Electron-Mobility Transistors (HEMTs) are designed for high-performance power conversion applications. These modules feature a high breakdown voltage and a low gate charge. The GNP2x series offers high efficiency, high power density, and fast switching capabilities. ROHM GaN HEMTs feature an 8.5V transient gate-to-source voltage and operate within the -55°C to +150°C temperature range. Typical applications include high-switching-frequency and high-density converters.
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