600V & 1200V Trenchstop™ Performance Series IGBTs

Infineon Technologies 600V and 1200V Trenchstop™ Performance Series IGBTs (Insulated-Gate Bipolar Transistors) combine Trench top-cell and field stop concept leads to significantly improved static and dynamic performance. A combination of IGBTs with a soft recovery Emitter Controlled-Diode further minimizes turn-on losses. A compromise between switching and conduction losses allows for high efficiency.

Results: 3
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 Mfr.
Description Datasheet Availability Pricing (USD) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Package / Case
Mounting Style
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Infineon Technologies IGBTs INDUSTRY
Datasheet
1,890On Order
$4.11
$2.47
$1.78
$1.48
$1.35
Min.: 1
Mult.: 1
Si TO-247-3 Through Hole Single 600 V 1.6 V - 20 V, 20 V 53 A 200 W - 40 C + 175 C Trenchstop Performance Tube
Infineon Technologies IGBTs INDUSTRY
Datasheet
1,200Expected 11/30/2026
$5.16
$2.99
$2.44
$2.04
$1.85
Min.: 1
Mult.: 1
Si TO-247-3 Through Hole Single 600 V 1.6 V - 20 V, 20 V 80 A 319.2 W - 40 C + 175 C Trenchstop IGBT3 Tube
Infineon Technologies IGBTs INDUSTRY
Datasheet
Non-Stocked Lead-Time 36 Weeks
$4.75
$2.60
$2.12
$1.63
$1.55
Min.: 1
Mult.: 1
Si TO-247-3 Through Hole Single 600 V 1.6 V - 20 V, 20 V 67 A 246 W - 40 C + 175 C Trenchstop Performance Tube