TRSx65H SiC Schottky Barrier Diodes

Toshiba TRSx65H Silicon Carbide (SiC) Schottky Barrier Diodes (SBDs) are 650V devices based on third-generation technology utilizing Schottky metal. These components optimize the junction barrier Schottky (JBS) structure of the second-generation products, lowering the electric field at the Schottky interface and reducing leakage current, delivering enhanced efficiency. TRSx65H achieves a 17% lower forward voltage (1.2V typical) and improves trade-offs between the forward voltage and the total capacitive charge (17nC typical) than 2nd-Gen devices. With an enhanced forward voltage and reverse current ratio, a typical 1.1µA insulation resistance is achieved. Other features include forward DC current of up to 12A and square-wave non-repetitive surge currents of up to 640A.

Resultados: 12
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Descripción Hoja de datos Disponibilidad Precio: (USD) Filtre los resultados en la tabla por precio unitario en función de su cantidad.
Cantidad RoHS Modelo ECAD Estilo de montaje
Paquete / Cubierta
If - Corriente directa
Vrrm - Tensión inversa repetitiva
Vf - Tensión directa
Ifsm - Sobrecorriente en sentido directo
Ir - Corriente inversa
Empaquetado
Toshiba Diodos Schottky de SiC G3 SiC-SBD 650V 4A DFN8x8
Hoja de datos
6,822En existencias
Cinta cortada
$3.03
$1.47
$1.33
$1.27
Envase tipo carrete
$1.27
$0.879
Min.: 1
Mult.: 1
: 2,500
SMD/SMT DFN-8 4 A 650 V 1.2 V 230 A 2 uA Reel, Cut Tape
Toshiba Diodos Schottky de SiC G3 SiC-SBD 650V 6A DFN8x8
Hoja de datos
4,789En existencias
Cinta cortada
$3.59
$1.77
$1.59
$1.47
Envase tipo carrete
$1.47
$1.11
Min.: 1
Mult.: 1
: 2,500
SMD/SMT DFN-8 6 A 650 V 1.2 V 310 A 2 uA Reel, Cut Tape
Toshiba Diodos Schottky de SiC G3 SiC-SBD 650V 8A DFN8x8
Hoja de datos
2,134En existencias
Cinta cortada
$4.32
$2.25
$1.94
$1.74
Envase tipo carrete
$1.46
$1.35
Min.: 1
Mult.: 1
: 2,500
SMD/SMT DFN-8 8 A 650 V 1.2 V 410 A 2 uA Reel, Cut Tape
Toshiba Diodos Schottky de SiC G3 SiC-SBD 650V 10A DFN8x8
Hoja de datos
1,933En existencias
Cinta cortada
$4.80
$2.56
$2.20
$2.03
Envase tipo carrete
$1.55
$1.52
Min.: 1
Mult.: 1
: 2,500
SMD/SMT DFN-8 10 A 650 V 1.2 V 510 A 2 uA Reel, Cut Tape
Toshiba Diodos Schottky de SiC G3 SiC-SBD 650V 3A TO-220-2L
Hoja de datos
1En existencias
$3.30
$1.92
$1.19
$1.10
Min.: 1
Mult.: 1
Through Hole TO-220-2L 3 A 650 V 1.2 V 170 A 2 uA Tube
Toshiba Diodos Schottky de SiC G3 SiC-SBD 650V 12A DFN8x8
Hoja de datos
1,033En existencias
Cinta cortada
$4.97
$2.90
$2.37
$2.30
Envase tipo carrete
$2.30
$1.73
Min.: 1
Mult.: 1
: 2,500
SMD/SMT DFN-8 12 A 650 V 1.2 V 640 A 2.4 uA Reel, Cut Tape
Toshiba Diodos Schottky de SiC G3 SiC-SBD 650V 10A TO-220-2L
Hoja de datos
50En existencias
$4.52
$2.28
$2.18
$1.65
Ver
Min.: 1
Mult.: 1
Through Hole TO-220-2L 10 A 650 V 1.2 V 510 A 2 uA Tube
Toshiba Diodos Schottky de SiC G3 SiC-SBD 650V 12A TO-220-2L
Hoja de datos
63En existencias
150En pedido
$4.95
$3.00
$2.50
Min.: 1
Mult.: 1
Through Hole TO-220-2L 12 A 650 V 1.2 V 640 A 2.4 uA Tube
Toshiba Diodos Schottky de SiC G3 SiC-SBD 650V 4A TO-220-2L
Hoja de datos
208En existencias
$3.03
$1.47
$1.46
$1.26
Min.: 1
Mult.: 1
Through Hole TO-220-2L 4 A 650 V 1.2 V 230 A 2 uA Tube
Toshiba Diodos Schottky de SiC G3 SiC-SBD 650V 6A TO-220-2L
Hoja de datos
127En existencias
$3.58
$1.76
$1.74
$1.59
Min.: 1
Mult.: 1
Through Hole TO-220-2L 6 A 650 V 1.2 V 310 A 2 uA Tube
Toshiba Diodos Schottky de SiC G3 SiC-SBD 650V 8A TO-220-2L
Hoja de datos
21En existencias
$4.30
$2.13
$1.91
$1.90
Min.: 1
Mult.: 1
Through Hole TO-220-2L 8 A 650 V 1.2 V 410 A 2 uA Tube
Toshiba Diodos Schottky de SiC G3 SiC-SBD 650V 2A TO-220-2L
Hoja de datos
172En pedido
$2.87
$1.47
$1.05
$0.953
Min.: 1
Mult.: 1
Through Hole TO-220-2L 2 A 650 V 1.2 V 120 A 2 uA Tube