Automotive-Grade Silicon Carbide Power MOSFETs

STMicroelectronics Automotive-Grade Silicon Carbide Power MOSFETs are developed using ST's advanced and innovative 2nd/3rd generation SiC MOSFET technology. The devices feature low on-resistance per unit area and very good switching performance. The MOSFETs feature a very high operating temperature capability (TJ = +200°C), and a very fast and robust intrinsic body diode.

Results: 17
Select Image Part # Mfr. Description Datasheet Availability Pricing (USD) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Package / Case Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Qualification
STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247-4 package 558In Stock
$31.60
$25.30
$21.88
$20.72
Min.: 1
Mult.: 1
Through Hole HiP247-3 1 Channel 900 V 110 A 15.8 mOhms - 10 V, + 22 V 3.1 V 138 nC - 55 C + 200 C 625 W Enhancement AEC-Q101
STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package 443In Stock
$36.04
$28.85
$24.95
$23.62
Min.: 1
Mult.: 1
Through Hole HiP-247-4 1 Channel 1.2 kV 129 A 15 mOhms - 18 V, + 18 V 4.2 V 167 nC - 55 C + 200 C 673 W Enhancement AEC-Q101


STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package 181In Stock
600On Order
$26.03
$15.42
Min.: 1
Mult.: 1
Through Hole Hip247-4 1 Channel 1.2 kV 100 A 28 mOhms - 10 V, + 22 V 3 V 121 nC - 55 C + 200 C 541 W Enhancement AEC-Q101


STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an H2PAK-7 package 856In Stock
Cut Tape
$17.26
$12.86
$10.73
$9.56
Reel
$8.92
Min.: 1
Mult.: 1
: 1,000
SMD/SMT H2PAK-7 1 Channel 1.2 kV 40 A 54 mOhms - 18 V, + 18 V 4.2 V 54 nC - 55 C + 175 C 300 W Enhancement AEC-Q101
STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package 19In Stock
1,200Expected 10/29/2026
Cut Tape
$28.95
$21.62
$18.71
Reel
$17.71
Min.: 1
Mult.: 1
: 600
SMD/SMT HU3PAK-7 1 Channel 1.2 kV 100 A 28 mOhms - 10 V, + 22 V 3 V 121 nC - 55 C 555 W Enhancement AEC-Q101


STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package 43In Stock
600On Order
$24.64
$15.33
$14.38
Min.: 1
Mult.: 1
Through Hole HiP247-3 1 Channel 1.2 kV 56 A 37 mOhms - 10 V, + 22 V 3 V 73 nC - 55 C + 200 C 388 W Enhancement AEC-Q101


STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package 3In Stock
1,200On Order
$26.03
$16.90
$14.95
$13.75
Min.: 1
Mult.: 1
Through Hole HiP-247-4 1 Channel 1.2 kV 56 A 37 mOhms - 18 V, + 18 V 4.2 V 73 nC - 55 C + 200 C 388 W Enhancement AEC-Q101


STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package 14In Stock
600Expected 9/3/2027
$18.19
$13.86
$11.54
$10.30
$9.61
Min.: 1
Mult.: 1
Through Hole HiP-247-3 1 Channel 1.2 kV 40 A 54 mOhms - 18 V, + 18 V 4.2 V 56 nC - 55 C + 200 C 312 W Enhancement AEC-Q101
STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mOhm typ., 110 A in an HU3PAK package
1,200Expected 8/6/2027
Cut Tape
$40.08
$32.08
$27.74
Reel
$26.27
Min.: 1
Mult.: 1
: 600
SMD/SMT HU3PAK-7 1 Channel 750 V 110 A 15 mOhms - 10 V, + 22 V 3.2 V 154 nC - 55 C + 175 C 652 W Enhancement AEC-Q101
STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mOhm typ., 112 A in an H2PAK-7 package
1,985On Order
Cut Tape
$35.06
$28.07
$24.27
$22.98
Reel
$21.48
Min.: 1
Mult.: 1
: 1,000
SMD/SMT H2PAK-7 1 Channel 1.2 kV 112 A 22 mOhms - 10 V, + 22 V 3 V 150 nC - 55 C + 175 C 652 W Enhancement AEC-Q101
STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package
1,997Expected 4/16/2027
Cut Tape
$23.87
$14.78
$14.59
Reel
$13.47
Min.: 1
Mult.: 1
: 1,000
SMD/SMT H2PAK-7 1 Channel 1.2 kV 55 A 37 mOhms - 10 V, + 22 V 3 V 73 nC - 55 C + 175 C 375 W Enhancement AEC-Q101


STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package
998Expected 6/4/2027
Cut Tape
$29.98
$19.46
$19.42
$18.36
Reel
$17.15
Min.: 1
Mult.: 1
: 1,000
SMD/SMT H2PAK-7 1 Channel 900 V 110 A 12 mOhms - 18 V, + 18 V 4.2 V 138 nC - 55 C + 175 C 625 W Enhancement AEC-Q101
STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HU3PAK package
1,200Expected 4/9/2027
Cut Tape
$21.07
$16.06
$13.38
Reel
$11.92
Min.: 1
Mult.: 1
: 600
SMD/SMT HU3PAK-7 1 Channel 1.2 kV 40 A 72 mOhms - 10 V, + 22 V 3 V 54 nC - 55 C + 175 C 300 W Enhancement AEC-Q101
STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A
600Expected 8/6/2027
Cut Tape
$17.76
$13.53
$11.27
Reel
$10.05
$9.50
Min.: 1
Mult.: 1
: 600
SMD/SMT H2PAK-2 1 Channel 650 V 7 A 40 mOhms - 30 V, + 30 V 5 V 36 nC - 55 C + 150 C 266 W Enhancement AEC-Q101
STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A
1,800Expected 8/20/2027
Cut Tape
$17.59
$11.36
$10.36
Reel
$9.41
Min.: 1
Mult.: 1
: 600
SMD/SMT HU3PAK-7 1 Channel 650 V 30 A 72 mOhms - 10 V, + 22 V 4.2 V 29 nC - 55 C + 175 C 185 W Enhancement AEC-Q101


STMicroelectronics SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HU3PAK package
599Expected 12/14/2026
Cut Tape
$19.07
$13.09
$11.53
Reel
$10.40
Min.: 1
Mult.: 1
: 600
SMD/SMT HU3PAK-7 1 Channel 1.2 kV 30 A 87 mOhms - 18 V, + 18 V 4.2 V 37 nC - 55 C + 175 C 223 W Enhancement AEC-Q101
STMicroelectronics SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247-4 package
100On Order
$17.78
$13.25
$11.04
$9.84
Min.: 1
Mult.: 1
Through Hole HiP247-4 1 Channel 1.2 kV 40 A 54 mOhms - 10 V, + 22 V 3.1 V 56 nC - 55 C + 200 C 312 W Enhancement AEC-Q101