DMWSH120Hx 1200V N-Channel Power MOSFETs

Diodes Incorporated DMWSH120Hx 1200V N-Channel Power MOSFETs are silicon carbide MOSFETs designed to minimize the on-state resistance and maintain excellent switching performance. These MOSFETs feature low input capacitance, up to 100μA zero gate voltage drain current, up to ±250nA gate-source leakage, and a high BVDSS rating for power applications. The DMWSH120Hx MOSFETs operate within the -55°C to 175°C temperature range and comply with the UL 94V-0 flammability classification rating. These power MOSFETs are ideal for EV high-power DC-DC converters, EV charging systems, solar inverters, AC-DC traction inverters, and automotive motor drivers.

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Description Datasheet Availability Pricing (USD) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Mounting Style
Package / Case
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Diodes Incorporated SiC MOSFETs SiC MOSFET BVDSS: >1000V TO247 TUBE 30PS
Datasheet
20In Stock
$42.07
$28.34
$25.90
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 97.4 A 28.5 mOhms - 8 V, + 19 V 3.6 V 175 nC - 55 C + 175 C 405 W Enhancement


Diodes Incorporated SiC MOSFETs SiC MOSFET BVDSS: >1000V TO247-4 TUBE 30PS
Datasheet
17In Stock
$42.07
$28.34
$26.26
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 100 A 28.5 mOhms - 8 V, + 19 V 3.6 V 173.7 nC - 55 C + 175 C 429 W Enhancement


Diodes Incorporated SiC MOSFETs SiC MOSFET BVDSS: >1000V TO247-4 TUBE 30PS
Datasheet
20In Stock
$49.73
$34.29
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 100 A 28.5 mOhms - 8 V, + 19 V 2.5 V 173.7 nC - 55 C + 175 C 429 W Enhancement


Diodes Incorporated SiC MOSFETs SiC MOSFET BVDSS: >1000V TO247 TUBE 30PS
Datasheet
31In Stock
$25.08
$15.09
$14.17
Min.: 1
Mult.: 1
Through Hole To-247-3 1 Channel 1.2 kV 72.7 A 43 mOhms - 8 V, + 19 V 2.5 V 105 nC - 55 C + 175 C 341 W Enhancement


Diodes Incorporated SiC MOSFETs SiC MOSFET BVDSS: >1000V TO247 TUBE 30PS
Datasheet
78In Stock
$16.30
$9.24
$8.55
$8.31
$7.97
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 41 A 97.5 mOhms - 4 V, + 15 V 3.5 V 50.9 nC - 55 C + 170 C 246 W Enhancement


Diodes Incorporated SiC MOSFETs SiC MOSFET BVDSS: >1000V TO247 TUBE 30PS
Datasheet
60In Stock
$20.11
$11.58
$10.76
$10.70
$10.40
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 41 A 97.5 mOhms - 4 V, + 15 V 3.5 V 50.9 nC - 55 C + 175 C 246 W Enhancement


Diodes Incorporated SiC MOSFETs SiC MOSFET BVDSS: >1000V TO247-4 TUBE 30PS
Datasheet
87In Stock
$16.30
$9.24
$9.23
$8.31
$7.45
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 40 A 97.5 mOhms - 4 V, + 15 V 3.5 V 51.1 nC - 55 C + 175 C 235 W Enhancement


Diodes Incorporated SiC MOSFETs SiC MOSFET BVDSS: >1000V TO247-4 TUBE 30PS
Datasheet
60In Stock
$20.11
$11.58
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 40 A 97.5 mOhms - 4 V, + 15 V 3.5 V 51.1 nC - 55 C + 175 C 235 W Enhancement


Diodes Incorporated SiC MOSFETs SiC MOSFET BVDSS: >1000V TO247 TUBE 30PS
Datasheet
120Factory Stock Available
More Info Available
$50.23
$32.86
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 97.4 A 28.5 mOhms - 8 V, + 19 V 3.6 V 175 nC - 55 C + 175 C 405 W Enhancement


Diodes Incorporated SiC MOSFETs SiC MOSFET BVDSS: >1000V TO263-7 TUBE 50PCS
Datasheet
100Factory Stock Available
More Info Available
$13.38
$8.79
$7.42
$7.07
Min.: 1
Mult.: 1
SMD/SMT TO-263-7 1 Channel 1.2 kV 38.2 A 90 mOhms - 4 V, + 15 V 3.5 V 54.6 nC - 55 C + 175 C 197 W Enhancement