IPW60R024CFD7XKSA1

Infineon Technologies
726-IPW60R024CFD7XKS
IPW60R024CFD7XKSA1

Mfr.:

Description:
MOSFETs HIGH POWER_NEW

Datasheet:
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Learn more about Infineon Technologies IPW60R024CFD7XKSA1

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: MOSFETs
RoHS:  
Si
Through Hole
TO-247-3
N-Channel
1 Channel
650 V
77 A
24 mOhms
- 20 V, 20 V
4 V
183 nC
- 55 C
+ 150 C
320 W
Enhancement
Tube
Brand: Infineon Technologies
Configuration: Single
Product Type: MOSFETs
Series: IPW60R024CFD7
Factory Pack Quantity: 240
Subcategory: Transistors
Part # Aliases: IPW60R024CFD7 SP002621050
Unit Weight: 6 g
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Compliance Codes
MXHTS:
8541299900
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
ECCN:
EAR99
Origin Classifications
Country of Origin:
Germany
Assembly Country of Origin:
China
Country of Diffusion:
Austria
The country is subject to change at the time of shipment.

CFD7 CoolMOS™ MOSFETs

Infineon Technologies CFD7 CoolMOS™ MOSFETs are ideal for resonant high power topologies and feature high voltage superjunction MOSFET technology. The MOSFETs have an integrated fast body diode and completes the CoolMOS 7 series. Typical high power switch-mode power supply (SMPS) applications include server, telecom, and EV charging stations.

CoolMOS™ Superjunction MOSFETs

Infineon CoolMOS™ Power Transistors provide all the benefits of a fast-switching SJ MOSFET. Combined with the generation CoolMOS 7, Infineon continues to set price, performance, and quality benchmarks.

Experience the Difference in Power

Infineon is the leader in the power semiconductor market. With more than 20 years of experience and as the innovator of the revolutionary CoolMOS™ super junction MOSFET technology, Infineon continues pioneering in the power management field. Customers can select based on individual design/system requirements from the industry's broadest silicon-based SJ MOSFET portfolio. As one of the few manufacturers mastering all three main power technologies, Infineon complements this assortment with a groundbreaking wide bandgap (WBG) offering. This offering comprises silicon-carbide-based CoolSiC™ MOSFETs, matching diodes, and gallium-nitride-based CoolGaN™ e-mode HEMTs. Solutions are available, ranging from exceptional price performance through unrivaled robustness to best-in-class devices. This enables customers to build more efficient, environmentally friendly, sustainable applications.

In Stock: 333

Stock:
333 Can Ship Immediately
Factory Lead-Time:
16 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (USD)

Qty. Unit Price
Ext. Price
$20.67 $20.67
$11.71 $117.10
$10.91 $1,091.00
$10.02 $4,809.60

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