CoolMOS™ P7 MOSFETs

Infineon Technologies CoolMOS™ P7 MOSFETs deliver a best-in-class price/performance ratio with excellent ease of use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications, including adapters and chargers, lighting, audio SMPS, AUX, and industrial power. The 600V CoolMOS P7 power MOSFETs target low-power and high-power SMPS applications like solar inverters, servers, telecom, and EV charging stations. Infineon P7 MOSFETs are fully optimized for hard- and soft-switching topologies. 

Resultados: 115
Seleccionar Imagen N.° de pieza Fabricante: Descripción Hoja de datos Disponibilidad Precio: (USD) Filtre los resultados en la tabla por precio unitario en función de su cantidad. Cantidad RoHS Modelo ECAD Tecnología Estilo de montaje Paquete / Cubierta Polaridad del transistor Número de canales Vds - Tensión disruptiva entre drenaje y fuente Id - Corriente de drenaje continua Rds On - Resistencia entre drenaje y fuente Vgs - Tensión entre puerta y fuente Vgs th - Tensión umbral entre puerta y fuente Qg - Carga de puerta Temperatura de trabajo mínima Temperatura de trabajo máxima Dp - Disipación de potencia Modo canal Nombre comercial Empaquetado
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER 64,583En existencias
$2.13
$1.01
$0.896
$0.709
$0.538
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 700 V 8.5 A 600 mOhms 16 V 2.5 V 10.5 nC - 40 C + 150 C 24.9 W Enhancement CoolMOS Tube
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW 4,768En existencias
Cinta cortada
$4.38
$2.20
$1.98
$1.60
$1.56
Envase tipo carrete
$1.47
Min.: 1
Mult.: 1
: 2,500
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 800 V 13 A 310 mOhms 20 V 2.5 V 30 nC - 55 C + 150 C 84 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW 3,868En existencias
Cinta cortada
$2.85
$1.38
$1.23
$0.976
$0.906
Envase tipo carrete
$0.814
Min.: 1
Mult.: 1
: 2,500
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 950 V 6 A 1.2 Ohms 20 V 2.5 V 15 nC - 55 C + 150 C 52 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW 5,234En existencias
Cinta cortada
$5.76
$2.95
$2.67
$2.26
Envase tipo carrete
$2.13
Min.: 1
Mult.: 1
: 1,000
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 26 A 100 mOhms 20 V 3 V 36 nC - 55 C + 150 C 95 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW 8,670En existencias
Cinta cortada
$2.33
$1.11
$0.987
$0.777
Envase tipo carrete
$0.632
Ver
Min.: 1
Mult.: 1
: 2,500
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 800 V 4.5 A 1 Ohms 20 V 2.5 V 11 nC - 55 C + 150 C 37 W Enhancement CoolMOS Reel, Cut Tape

Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW 3,510En existencias
$9.18
$4.78
$4.38
$3.99
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 37 A 69 mOhms 20 V 3 V 51 nC - 55 C + 150 C 129 W Enhancement CoolMOS Tube
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER 4,850En existencias
$2.22
$1.05
$0.937
$0.736
Ver
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 700 V 8.5 A 490 mOhms 30 V 2.5 V 10.5 nC - 40 C + 150 C 24.9 W Enhancement CoolMOS Tube
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW 9,128En existencias
Cinta cortada
$1.81
$0.848
$0.754
$0.588
Envase tipo carrete
$0.471
Ver
Min.: 1
Mult.: 1
: 2,500
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 800 V 2.5 A 2 Ohms 20 V 2.5 V 7.5 nC - 55 C + 150 C 22 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW 4,448En existencias
Cinta cortada
$2.82
$1.37
$1.22
$0.969
$0.898
Envase tipo carrete
$0.806
Min.: 1
Mult.: 1
: 2,500
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 800 V 7 A 640 mOhms 20 V 2.5 V 17 nC - 55 C + 150 C 51 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW 1,872En existencias
$5.76
$2.95
$2.68
$2.18
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 26 A 100 mOhms 20 V 3 V 36 nC - 55 C + 150 C 28 W Enhancement CoolMOS Tube
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW 3,453En existencias
Cinta cortada
$10.49
$5.69
$5.23
$5.08
$4.80
Envase tipo carrete
$4.80
Min.: 1
Mult.: 1
: 3,000
Si SMD/SMT VSON-4 N-Channel 1 Channel 600 V 41 A 53 mOhms 20 V 3 V 67 nC - 40 C + 150 C 201 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW 5,586En existencias
Cinta cortada
$2.48
$1.59
$1.06
$0.839
Envase tipo carrete
$0.676
Ver
Min.: 1
Mult.: 1
: 3,000
Si SMD/SMT SOT-223-3 N-Channel 1 Channel 950 V 6 A 1.2 Ohms 20 V 2.5 V 15 nC - 55 C + 150 C 7 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW 1,266En existencias
$2.95
$1.43
$1.28
$0.975
Ver
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 6 A 770 mOhms 20 V 2.5 V 15 nC - 55 C + 150 C 26 W Enhancement CoolMOS Tube
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER 1,649En existencias
$2.61
$1.25
$1.12
$0.902
Ver
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 700 V 12.5 A 300 mOhms 30 V 2.5 V 16.4 nC - 40 C + 150 C 26.5 W Enhancement CoolMOS Tube
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW 2,007En existencias
Cinta cortada
$2.22
$1.05
$0.937
$0.736
Envase tipo carrete
$0.586
Ver
Min.: 1
Mult.: 1
: 3,000
Si SMD/SMT SOT-223-3 N-Channel 1 Channel 950 V 4 A 2 Ohms 20 V 2.5 V 10 nC - 55 C + 150 C 7 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW 1,444En existencias
$3.89
$1.70
$1.52
$1.30
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 11 A 450 mOhms 30 V 3 V 24 nC - 55 C + 150 C 29 W Enhancement CoolMOS Tube
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW 1,421En existencias
$2.64
$1.18
$1.06
$0.889
Ver
Min.: 1
Mult.: 1
Si Through Hole TO-251-3 N-Channel 1 Channel 800 V 6 A 900 mOhms 20 V 2.5 V 15 nC - 55 C + 150 C 45 W Enhancement CoolMOS Tube
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW 2,472En existencias
Cinta cortada
$2.26
$1.07
$0.907
$0.748
Envase tipo carrete
$0.616
Ver
Min.: 1
Mult.: 1
: 2,500
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 6 A 490 mOhms 20 V 3 V 9 nC - 55 C + 150 C 30 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW 220En existencias
$12.78
$6.89
$6.36
$6.20
Min.: 1
Mult.: 1
Si Through Hole TO-247-4 N-Channel 1 Channel 650 V 61 A 45 mOhms 20 V 3.5 V 90 nC - 55 C + 150 C 201 W Enhancement CoolMOS Tube
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW 4,708En existencias
Cinta cortada
$10.65
$7.12
$5.73
$5.14
Envase tipo carrete
$4.84
Ver
Min.: 1
Mult.: 1
: 1,000
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 120 V 61 A 45 mOhms 20 V 1.7 V 90 nC - 55 C + 150 C 201 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW 7,191En existencias
Cinta cortada
$7.06
$3.84
$3.50
$3.06
$3.00
Envase tipo carrete
$2.76
Min.: 1
Mult.: 1
: 3,000
Si SMD/SMT VSON-4 N-Channel 1 Channel 600 V 33 A 85 mOhms 20 V 3 V 45 nC - 40 C + 150 C 137 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW 18,355En existencias
7,000Se espera el 02/11/2026
$7.54
$3.95
$3.60
$3.07
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 37 A 69 mOhms 20 V 3 V 51 nC - 55 C + 150 C 129 W Enhancement CoolMOS Tube

Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW 12,656En existencias
$13.95
$7.58
$7.01
$6.96
Min.: 1
Mult.: 1
Máx.: 4,000
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 76 A 30 mOhms 20 V 3 V 121 nC - 55 C + 150 C 255 W Enhancement CoolMOS Tube

Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW 12,781En existencias
62,640En pedido
$5.40
$2.67
$2.43
$2.02
$2.00
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 18 A 145 mOhms 20 V 3 V 25 nC - 55 C + 150 C 72 W Enhancement CoolMOS Tube
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW 7,574En existencias
500Se espera el 21/10/2026
$3.32
$1.61
$1.48
$1.18
$0.957
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 7 A 640 mOhms 20 V 2.5 V 17 nC - 55 C + 150 C 27 W Enhancement CoolMOS Tube