Gen-3 Fast (G3F) SiC MOSFETs

GeneSiC Semiconductor Gen-3 Fast (G3F) SiC MOSFETs are developed using a proprietary trench-assisted planar technology for high-speed performance. The technology enables an extremely low RDS(ON) increase vs. temperature, which results in low power losses across the full operating range. Available in 650V and 1200V variants, these MOSFETs are optimized for faster switching speeds, higher efficiency, and increased power density. GeneSiC G3F SiC MOSFETs offer high-speed, cool-running performance, with up to a +25°C lower case temperature. The thermally enhanced TOLL package for the 650V variant provides space and thermal management advantages. The 1200V models offer the power needed for next-generation EVs and industrial applications. Typical applications include AI data centers, EV roadside superchargers, onboard chargers (OBC), energy storage systems (ESS), and solar power solutions.

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Cantidad RoHS Modelo ECAD Estilo de montaje
Paquete / Cubierta
Polaridad del transistor
Número de canales
Vds - Tensión disruptiva entre drenaje y fuente
Id - Corriente de drenaje continua
Rds On - Resistencia entre drenaje y fuente
Modo canal
GeneSiC Semiconductor MOSFETs de SiC 1200V 65mohm TO-263-7 G3F SiC MOSFET
Hoja de datos
1,570En existencias
Min.: 1
Mult.: 1
Carrete: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 65 mOhms Enhancement
GeneSiC Semiconductor MOSFETs de SiC 1200V 65mohm TO-247-4 G3F SiC MOSFET 513En existencias
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 65 mOhms Enhancement
GeneSiC Semiconductor MOSFETs de SiC 1200V 75mohm TO-263-7 G3F SiC MOSFET 653En existencias
Min.: 1
Mult.: 1
Carrete: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 39 A 75 mOhms Enhancement
GeneSiC Semiconductor MOSFETs de SiC 1200V 75mohm TO-247-4 G3F SiC MOSFET 1,699En existencias
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 35 A 75 mOhms Enhancement