RM2312-T

Name: Rectron RM2312-T
Brand: Rectron
SKU: 583-RM2312-T
Price: 0.72 USD
Availability: InStock

Images are for reference only
See Product Specifications

Mouser #:

583-RM2312-T

Mfr. #:

RM2312-T

Mfr.:

Rectron

Description:

MOSFETs

Datasheet:

RM2312-T Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about ECAD Model.

More Information

Learn more about Rectron RM2312-T

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Rectron
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	SOT23-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	20 V
Id - Continuous Drain Current:	4.5 A
Rds On - Drain-Source Resistance:	33 mOhms
Vgs - Gate-Source Voltage:	12 V
Vgs th - Gate-Source Threshold Voltage:	500 mV
Qg - Gate Charge:	10 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	1.25 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Rectron
Configuration:	Single
Fall Time:	28 ns
Forward Transconductance - Min:	10 S
Product Type:	MOSFETs
Rise Time:	18 ns
Factory Pack Quantity:	3000
Subcategory:	Transistors
Typical Turn-Off Delay Time:	60 ns
Typical Turn-On Delay Time:	20 ns

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

RM2312-T Datasheet (PDF)

Compliance Codes

MXHTS:: 8541299900
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

RM2312 N-Channel Enhancement Mode Power MOSFET

Rectron RM2312 N-Channel Enhancement Mode Power MOSFET uses advanced trench technology to provide excellent R_DS(ON). The MOSFET features a low gate charge and operation with gate voltages as low as 2.5V. The device is suitable for use as battery protection or in other switching applications.

FEATURED PRODUCTS

RECTRON

RM10N100LD N-Channel Enhancement Mode Power MOSFET

Uses trench technology to provide excellent RDS(ON) with a low gate charge.

Learn More

RM2312 N-Channel Enhancement Mode Power MOSFET

Uses advanced trench technology to provide excellent R_DS(ON).

Learn More

RM3134 Dual N-Channel MOSFET

Lead-free product housed in a surface mount package.

Learn More

RM135N100HD N-Channel Super Trench Power MOSFET

Features Super Trench technology optimized for efficient high-frequency switching performance.

Learn More

RM150N60HD N-Channel Enhancement Mode Power MOSFET

Features advanced Trench technology and design to provide excellent R_DS(ON) and a low gate charge.

Learn More

In Stock: 2,277

Stock:: 2,277 Can Ship Immediately

An unexpected error occurred. Please try again later.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+$7.00)

Pricing (USD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$0.728	$0.73
	$0.497	$4.97
	$0.315	$31.50
	$0.198	$99.00
	$0.176	$176.00
Full Reel (Order in multiples of 3000)
	$0.148	$444.00
	$0.129	$774.00
	$0.114	$1,026.00
	$0.103	$2,472.00

† $7.00 MouseReel™ fee will be added and calculated in your shopping cart. All MouseReel™ orders are non-cancellable and non-returnable. ↩

RM2312-T

Mfr.: Rectron

Description: MOSFETs

Specifications

Documents (1)

Datasheet

Product & Trade Compliance

More Information

RM2312 N-Channel Enhancement Mode Power MOSFET

Customers Also Bought

FEATURED PRODUCTS RECTRON

In Stock: 2,277

Pricing (USD)

QuickView

An unexpected error has occurred.

Mfr.:

Rectron

Description:

MOSFETs

FEATURED PRODUCTS

RECTRON