Parallel P-SRAM Memory

Avalanche Technology Parallel Persistent SRAM Memory are Magneto-Resistive Random-Access Memory (MRAM) that offers a density range from 1Mbit to 32Mbit. The P-SRAM memory operates from 2.7V to 3.6V voltage range. The P-SRAM memory devices are available in small footprint 54-pin TSOP, 44-pin TSOP, and 48-Ball FBGA packages. These packages are compatible with similar low-power volatile and non-volatile products. The parallel persistent SRAM memory devices are offered with -40°C to 85°C industrial and -40°C to 105°C industrial plus operating temperature ranges.

Resultados: 23
Seleccionar Imagen N.° de pieza
 Fabricante:
Descripción Hoja de datos Disponibilidad Precio: (USD) Filtre los resultados en la tabla por precio unitario en función de su cantidad.
Cantidad RoHS Modelo ECAD Paquete / Cubierta
Tipo de interfaz
Tamaño de memoria
Organización
Ancho de bus de datos
Tiempo de acceso
Voltaje de alimentación - Mín.
Voltaje de alimentación - Máx.
Corriente de suministro operativa
Temperatura de trabajo mínima
Temperatura de trabajo máxima
Serie
Empaquetado
Avalanche Technology Memoria RAM magnetorresistiva Avalanche Asynchronous Parallel interface P-SRAM 32Mb in FBGA48 package with x16 interface, 3V, -40 C to 85 C
Hoja de datos
114En existencias
Min.: 1
Mult.: 1

FBGA-48 Parallel 32 Mbit 2 M x 16 16 bit 35 ns 2.7 V 3.6 V 12 mA - 40 C + 85 C AS3032316 Tray
Avalanche Technology Memoria RAM magnetorresistiva Avalanche Asynchronous Parallel interface P-SRAM 4Mb in 44TSOP package with x16 interface, 3V, -40 C to 85 C
Hoja de datos
121En existencias
Min.: 1
Mult.: 1

TSOP-44 Parallel 4 Mbit 256 k x 16 16 bit 35 ns 2.7 V 3.6 V 12 mA - 40 C + 85 C AS3004316 Tray
Avalanche Technology Memoria RAM magnetorresistiva Avalanche Asynchronous Parallel interface P-SRAM 1Mb in FBGA48 package with x16 interface, 3V, -40 C to 85 C
Hoja de datos
No en existencias
Min.: 1,008
Mult.: 168

FBGA-48 Parallel 1 Mbit 64 k x 16 16 bit 35 ns 2.7 V 3.6 V 12 mA - 40 C + 85 C AS3001316 Tray
Avalanche Technology Memoria RAM magnetorresistiva Avalanche Asynchronous Parallel interface P-SRAM 1Mb in 44TSOP package with x16 interface, 3V, -40 C to 85 C
Hoja de datos
No en existencias
Min.: 1,350
Mult.: 135

TSOP-44 Parallel 1 Mbit 64 k x 16 16 bit 35 ns 2.7 V 3.6 V 12 mA - 40 C + 85 C AS3001316 Tray
Avalanche Technology Memoria RAM magnetorresistiva Avalanche Asynchronous Parallel interface P-SRAM 1Mb in 54TSOP package with x16 interface, 3V, -40 C to 85 C
Hoja de datos
No en existencias
Min.: 1,056
Mult.: 96

TSOP-54 Parallel 1 Mbit 64 k x 16 16 bit 35 ns 2.7 V 3.6 V 12 mA - 40 C + 85 C AS3001316 Tray
Avalanche Technology Memoria RAM magnetorresistiva Avalanche Asynchronous Parallel interface P-SRAM 1Mb in FBGA48 package with x16 interface, 3V, -40 C to 105 C
Hoja de datos
No en existencias
Min.: 1,008
Mult.: 168

FBGA-48 Parallel 1 Mbit 64 k x 16 16 bit 35 ns 2.7 V 3.6 V 12 mA - 40 C + 105 C AS3001316 Tray
Avalanche Technology Memoria RAM magnetorresistiva Avalanche Asynchronous Parallel interface P-SRAM 1Mb in 44TSOP package with x16 interface, 3V, -40 C to 105 C
Hoja de datos
No en existencias
Min.: 1,350
Mult.: 135

TSOP-44 Parallel 1 Mbit 64 k x 16 16 bit 35 ns 2.7 V 3.6 V 12 mA - 40 C + 105 C AS3001316 Tray
Avalanche Technology Memoria RAM magnetorresistiva Avalanche Asynchronous Parallel interface P-SRAM 1Mb in 54TSOP package with x16 interface, 3V, -40 C to 105 C
Hoja de datos
No en existencias
Min.: 1,056
Mult.: 96

TSOP-54 Parallel 1 Mbit 64 k x 16 16 bit 35 ns 2.7 V 3.6 V 12 mA - 40 C + 105 C AS3001316 Tray
Avalanche Technology Memoria RAM magnetorresistiva Avalanche Asynchronous Parallel interface P-SRAM 16Mb in FBGA48 package with x16 interface, 3V, -40 C to 85 C
Hoja de datos
No en existencias
Min.: 1,008
Mult.: 168

FBGA-48 Parallel 16 Mbit 1 M x 16 16 bit 35 ns 2.7 V 3.6 V 12 mA - 40 C + 85 C AS3016316 Tray
Avalanche Technology Memoria RAM magnetorresistiva Avalanche Asynchronous Parallel interface P-SRAM 16Mb in FBGA48 package with x16 interface, 3V, -40 C to 105 C
Hoja de datos
No en existencias
Min.: 1,008
Mult.: 168

FBGA-48 Parallel 16 Mbit 1 M x 16 16 bit 35 ns 2.7 V 3.6 V 12 mA - 40 C + 105 C AS3016316 Tray
Avalanche Technology Memoria RAM magnetorresistiva Avalanche Asynchronous Parallel interface P-SRAM 16Mb in 54TSOP package with x16 interface, 3V, -40 C to 105 C
Hoja de datos
No en existencias
Min.: 1,056
Mult.: 96

TSOP-54 Parallel 16 Mbit 1 M x 16 16 bit 35 ns 2.7 V 3.6 V 12 mA - 40 C + 105 C AS3016316 Tray
Avalanche Technology Memoria RAM magnetorresistiva Avalanche Asynchronous Parallel interface P-SRAM 32Mb in 54TSOP package with x16 interface, 3V, -40 C to 85 C
Hoja de datos
No en existencias
Min.: 1,056
Mult.: 96

TSOP-54 Parallel 32 Mbit 2 M x 16 16 bit 35 ns 2.7 V 3.6 V 12 mA - 40 C + 85 C AS3032316 Tray
Avalanche Technology Memoria RAM magnetorresistiva Avalanche Asynchronous Parallel interface P-SRAM 32Mb in FBGA48 package with x16 interface, 3V, -40 C to 105 C
Hoja de datos
No en existencias
Min.: 1,008
Mult.: 168

FBGA-48 Parallel 32 Mbit 2 M x 16 16 bit 35 ns 2.7 V 3.6 V 12 mA - 40 C + 105 C AS3032316 Tray
Avalanche Technology Memoria RAM magnetorresistiva Avalanche Asynchronous Parallel interface P-SRAM 32Mb in 54TSOP package with x16 interface, 3V, -40 C to 105 C
Hoja de datos
No en existencias
Min.: 1,056
Mult.: 96

TSOP-54 Parallel 32 Mbit 2 M x 16 16 bit 35 ns 2.7 V 3.6 V 12 mA - 40 C + 105 C AS3032316 Tray
Avalanche Technology Memoria RAM magnetorresistiva Avalanche Asynchronous Parallel interface P-SRAM 4Mb in FBGA48 package with x16 interface, 3V, -40 C to 85 C
Hoja de datos
No en existencias
Min.: 1,008
Mult.: 168

FBGA-48 Parallel 4 Mbit 256 k x 16 16 bit 35 ns 2.7 V 3.6 V 12 mA - 40 C + 85 C AS3004316 Tray
Avalanche Technology Memoria RAM magnetorresistiva Avalanche Asynchronous Parallel interface P-SRAM 4Mb in 54TSOP package with x16 interface, 3V, -40 C to 85 C
Hoja de datos
No en existencias
Min.: 1,056
Mult.: 96

TSOP-54 Parallel 4 Mbit 256 k x 16 16 bit 35 ns 2.7 V 3.6 V 12 mA - 40 C + 85 C AS3004316 Tray
Avalanche Technology Memoria RAM magnetorresistiva Avalanche Asynchronous Parallel interface P-SRAM 4Mb in FBGA48 package with x16 interface, 3V, -40 C to 105 C
Hoja de datos
No en existencias
Min.: 1,008
Mult.: 168

FBGA-48 Parallel 4 Mbit 256 k x 16 16 bit 35 ns 2.7 V 3.6 V 12 mA - 40 C + 105 C AS3004316 Tray
Avalanche Technology Memoria RAM magnetorresistiva Avalanche Asynchronous Parallel interface P-SRAM 4Mb in 44TSOP package with x16 interface, 3V, -40 C to 105 C
Hoja de datos
No en existencias
Min.: 1,350
Mult.: 135

TSOP-44 Parallel 4 Mbit 256 k x 16 16 bit 35 ns 2.7 V 3.6 V 12 mA - 40 C + 105 C AS3004316 Tray
Avalanche Technology Memoria RAM magnetorresistiva Avalanche Asynchronous Parallel interface P-SRAM 4Mb in 54TSOP package with x16 interface, 3V, -40 C to 105 C
Hoja de datos
No en existencias
Min.: 1,056
Mult.: 96

TSOP-54 Parallel 4 Mbit 256 k x 16 16 bit 35 ns 2.7 V 3.6 V 12 mA - 40 C + 105 C AS3004316 Tray
Avalanche Technology Memoria RAM magnetorresistiva Avalanche Asynchronous Parallel interface P-SRAM 8Mb in FBGA48 package with x16 interface, 3V, -40 C to 85 C
Hoja de datos
No en existencias
Min.: 1,008
Mult.: 168

FBGA-48 Parallel 8 Mbit 512 k x 16 16 bit 35 ns 2.7 V 3.6 V 12 mA - 40 C + 85 C AS3008316 Tray
Avalanche Technology Memoria RAM magnetorresistiva Avalanche Asynchronous Parallel interface P-SRAM 8Mb in 54TSOP package with x16 interface, 3V, -40 C to 85 C
Hoja de datos
No en existencias
Min.: 1,056
Mult.: 96

TSOP-54 Parallel 8 Mbit 512 k x 16 16 bit 35 ns 2.7 V 3.6 V 12 mA - 40 C + 85 C AS3008316 Tray
Avalanche Technology Memoria RAM magnetorresistiva Avalanche Asynchronous Parallel interface P-SRAM 8Mb in FBGA48 package with x16 interface, 3V, -40 C to 105 C
Hoja de datos
No en existencias
Min.: 1,008
Mult.: 168

FBGA-48 Parallel 8 Mbit 512 k x 16 16 bit 35 ns 2.7 V 3.6 V 12 mA - 40 C + 105 C AS3008316 Tray
Avalanche Technology Memoria RAM magnetorresistiva Avalanche Asynchronous Parallel interface P-SRAM 8Mb in 54TSOP package with x16 interface, 3V, -40 C to 105 C
Hoja de datos
No en existencias
Min.: 1,056
Mult.: 96

TSOP-54 Parallel 8 Mbit 512 k x 16 16 bit 35 ns 2.7 V 3.6 V 12 mA - 40 C + 105 C AS3008316 Tray