STY112N65M5

STMicroelectronics
511-STY112N65M5
STY112N65M5

Fabricante:

Descripción:
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Channel 650V 93A 0.019 Ohm Mdmesh M5

Modelo ECAD:
Descargue Library Loader gratis para convertir este archivo para su herramienta ECAD. Conozca más sobre el modelo ECAD.

Disponibilidad

Existencias:
No en existencias
Plazo de entrega de fábrica:
16 Semanas Tiempo estimado de producción de fábrica.
Mínimo: 600   Múltiples: 600
Precio unitario:
$-.--
Precio ext.:
$-.--
Est. Tarifa:
El envío de este producto es GRATUITO

Precio (USD)

Cantidad Precio unitario
Precio ext.
$37.54 $22,524.00

Atributo del producto Valor de atributo Seleccionar atributo
STMicroelectronics
Categoría de producto: Transistor metal-óxido-semiconductor de efecto de campo (MOSFET)
RoHS:  
Si
Through Hole
Max247-3
N-Channel
1 Channel
650 V
96 A
19 mOhms
- 25 V, 25 V
4 V
350 nC
- 55 C
+ 150 C
625 W
Enhancement
MDmesh
Tube
Marca: STMicroelectronics
Configuración: Single
Tipo de producto: MOSFETs
Serie: Mdmesh M5
Cantidad de empaque de fábrica: 600
Subcategoría: Transistors
Tipo de transistor: 1 N-Channel
Peso de la unidad: 5 g
Productos encontrados:
Para mostrar productos similares, seleccione al menos una casilla de verificación
Seleccione al menos una de las casillas de verificación anteriores para mostrar productos similares en esta categoría.
Atributos seleccionados: 0

MXHTS:
85412999
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541210000
ECCN:
EAR99

MDmesh M5 Power MOSFETs

STMicroelectronics 550 and 650V MDmesh M5 series of super-junction Power MOSFETs offer outstanding RDS(on) values to significantly reduce losses in line-voltage PFC circuits and power supplies. This in turn enables new generations of electronic products offering greater energy savings, superior power density, and more compact applications.

Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low RDS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.

N-channel MDmesh V Power MOSFET

STMicroelectronics 550 and 650V MDmesh M5 series of super-junction Power MOSFETs offer outstanding RDS(on) values to significantly reduce losses in line-voltage PFC circuits and power supplies. This in turn enables new generations of electronic products to offer greater energy savings, superior power density, and more compact applications. This new technology will help product designers tackle emerging challenges such as the high-efficiency targets of new eco-design directives, and will also benefit the renewable energy sector by saving vital watts normally lost in power-control modules.