TJ40S04M3L,LXHQ
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757-TJ40S04M3L,LXHQ
TJ40S04M3L,LXHQ
Fabricante:
Descripción:
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 68W 1MHz Automotive; AEC-Q101
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 68W 1MHz Automotive; AEC-Q101
Hoja de datos:
En existencias: 46,532
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Existencias:
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Precio (USD)
| Cantidad | Precio unitario |
Precio ext.
|
|---|---|---|
| $1.59 | $1.59 | |
| $1.12 | $11.20 | |
| $0.872 | $87.20 | |
| $0.697 | $348.50 | |
| $0.623 | $623.00 | |
| Envase tipo carrete completo (pedir en múltiplos de 2000) | ||
| $0.566 | $1,132.00 | |
| $0.543 | $2,172.00 | |
| $0.528 | $12,672.00 | |
Hoja de datos
Application Notes
- Impacts of the dv/dt Rate on MOSFETs
- Impacts of the dv/dt Rate on MOSFETs
- MOSFET Avalanche Ruggedness
- MOSFET Avalanche Ruggedness
- MOSFET Gate Driver Circuit
- MOSFET Gate Driver Circuit
- MOSFET Parallening (Parasitic Oscillation Between Parallel Power MOSFETs)
- MOSFET Parallening (Parasitic Oscillation Between Parallel Power MOSFETs)
- Parasitic Oscillation and Ringing of Power MOSFETs
- Parasitic Oscillation and Ringing of Power MOSFETs
- Power MOSFET Electrical Characteristics
- Power MOSFET Electrical Characteristics
- Power MOSFET Maximum Ratings
- Power MOSFET Maximum Ratings
- Power MOSFET Selecting MOSFETs and Consideration for Circuit Design
- Power MOSFET Selecting MOSFETs and Consideration for Circuit Design
- Power MOSFET Structure and Characteristics
- Power MOSFET Structure and Characteristics
- Power MOSFET Thermal Design and Attachment of a Thermal Fin
- Power MOSFET Thermal Design and Attachment of a Thermal Fin
Models
Product Catalogs
Test/Quality Data
- CNHTS:
- 8541290000
- USHTS:
- 8541290065
- TARIC:
- 8541290000
- ECCN:
- EAR99
México

Toshiba Electronic Devices & Storage Corporation Automotive products
may be used as engineering samples, however; they are not intended for
volume automotive production or reliability testing without prior
approval by Toshiba Semiconductor and Storage.
Please contact a Mouser Technical Sales Representative for
further assistance.
5-0320-2