STGP8M120DF3

STMicroelectronics
511-STGP8M120DF3
STGP8M120DF3

Mfr.:

Description:
IGBTs Trench gate field-stop, 1200 V, 8 A low loss M series IGBT in a TO-220 package
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Datasheet:
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Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: IGBTs
RoHS:  
Si
TO-220-3
Through Hole
Single
1.2 kV
1.85 V
- 20 V, 20 V
16 A
167 W
- 55 C
+ 175 C
M
Tube
Brand: STMicroelectronics
Continuous Collector Current Ic Max: 8 A
Gate-Emitter Leakage Current: 250 uA
Product Type: IGBTs
Factory Pack Quantity: 1000
Subcategory: Transistors
Unit Weight: 2 g
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Attributes selected: 0

Compliance Codes
MXHTS:
8541299900
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8541299000
TARIC:
8541290000
ECCN:
EAR99
Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

M Series 1200V Trench Gate Field-Stop IGBTs

STMicroelectronics M Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. These devices represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short circuit capability are essential. A positive VCE(sat) temperature coefficient and tight parameter distribution also result in safer paralleling operation. Typical applications for these devices include industrial drives, UPS, solar, and welding.

In Stock: 274

Stock:
274
Can Ship Immediately
On Order:
1,000
Expected 9/7/2027
Factory Lead-Time:
20
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (USD)

Qty. Unit Price
Ext. Price
$8.41 $8.41
$5.51 $55.10
$4.06 $406.00
$3.60 $1,800.00
$3.20 $3,200.00

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