IXYP20N120C3

IXYS
747-IXYP20N120C3
IXYP20N120C3

Fabricante:

Descripción:
IGBTs GenX3 1200V XPT IGBT

Hoja de datos:
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En existencias: 588

Existencias:
588 Se puede enviar inmediatamente
Plazo de entrega de fábrica:
32 Semanas Tiempo estimado de producción de fábrica para cantidades superiores a las que se muestran.
Mínimo: 1   Múltiples: 1
Precio unitario:
$-.--
Precio ext.:
$-.--
Est. Tarifa:

Precio (USD)

Cantidad Precio unitario
Precio ext.
$7.87 $7.87
$4.16 $41.60
$3.59 $359.00
$3.58 $1,790.00

Atributo del producto Valor de atributo Seleccionar atributo
IXYS
Categoría de producto: IGBTs
RoHS:  
REACH - SVHC:
Si
TO-220-3
Through Hole
Single
1.2 kV
3.4 V
- 20 V, 20 V
40 A
278 W
- 55 C
+ 175 C
IXYP20N120
Tube
Marca: IXYS
Máx. corriente continua Ic del colector: 40 A
Corriente de fuga puerta-emisor: 100 nA
Tipo de producto: IGBT Transistors
Cantidad de empaque de fábrica: 50
Subcategoría: IGBTs
Nombre comercial: XPT
Peso de la unidad: 6 g
Productos encontrados:
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Atributos seleccionados: 0

Hoja de datos

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MXHTS:
8541299900
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8541299000
TARIC:
8541290000
ECCN:
EAR99

1200V XPT™ High Speed IGBTs

IXYS 1200V XPT™ High Speed IGBTs are high speed, high-gain 1200V Insulated Gate Bipolar Transistor products. The 1200V XPT High Speed IGBTs feature high current ratings (105A to 160A, Tc = 25°C) and are specifically optimized for reduced switching losses in high voltage applications that require hard-switching frequencies of up to 50kHz. IXYS 1200V XPT High Speed IGBTs have high-speed switching capabilities that allow customers to boost the power conversion efficiency of their designs and to use smaller, lighter and more cost-effective passive components. The resultant effect is a reduction in total system cost of ownership for these 1200V XPT High Speed IGBTs and a reduced PCB layout area.

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