IDW20G65C5XKSA1

Infineon Technologies
726-IDW20G65C5XKSA1
IDW20G65C5XKSA1

Fabricante:

Descripción:
Diodos Schottky de SiC SIC DIODES

Hoja de datos:
Modelo ECAD:
Descargue Library Loader gratis para convertir este archivo para su herramienta ECAD. Conozca más sobre el modelo ECAD.
Más información
Conozca más sobre Infineon Technologies IDW20G65C5XKSA1

En existencias: 750

Existencias:
750 Se puede enviar inmediatamente
Plazo de entrega de fábrica:
13 Semanas Tiempo estimado de producción de fábrica para cantidades superiores a las que se muestran.
Mínimo: 1   Múltiples: 1
Precio unitario:
$-.--
Precio ext.:
$-.--
Est. Tarifa:

Precio (USD)

Cantidad Precio unitario
Precio ext.
$9.53 $9.53
$7.11 $71.10
$5.75 $575.00
$5.11 $2,452.80
$4.37 $5,244.00

Atributo del producto Valor de atributo Seleccionar atributo
Infineon
Categoría de producto: Diodos Schottky de SiC
RoHS:  
Through Hole
TO-247-3
Single
20 A
650 V
1.5 V
103 A
1.1 uA
- 55 C
+ 175 C
XDW20G65
Tube
Marca: Infineon Technologies
Dp - Disipación de potencia : 112 W
Tipo de producto: SiC Schottky Diodes
Cantidad de empaque de fábrica: 240
Subcategoría: Diodes & Rectifiers
Nombre comercial: CoolSiC
Vr - Tensión inversa: 650 V
Alias de las piezas n.º: IDW20G65C5 SP001632900
Peso de la unidad: 6 g
Productos encontrados:
Para mostrar productos similares, seleccione al menos una casilla de verificación
Seleccione al menos una de las casillas de verificación anteriores para mostrar productos similares en esta categoría.
Atributos seleccionados: 0

Esta funcionalidad requiere que JavaScript esté habilitado.

MXHTS:
8541100101
CNHTS:
8541100000
CAHTS:
8541100090
USHTS:
8541100080
JPHTS:
854110090
KRHTS:
8541109000
TARIC:
8541100000
ECCN:
EAR99

Experience the Difference in Power

Infineon is the leader in the power semiconductor market. With more than 20 years of experience and as the innovator of the revolutionary CoolMOS™ super junction MOSFET technology, Infineon continues pioneering in the power management field. Customers can select based on individual design/system requirements from the industry's broadest silicon-based SJ MOSFET portfolio. As one of the few manufacturers mastering all three main power technologies, Infineon complements this assortment with a groundbreaking wide bandgap (WBG) offering. This offering comprises silicon-carbide-based CoolSiC™ MOSFETs, matching diodes, and gallium-nitride-based CoolGaN™ e-mode HEMTs. Solutions are available, ranging from exceptional price performance through unrivaled robustness to best-in-class devices. This enables customers to build more efficient, environmentally friendly, sustainable applications.

Silicon Carbide CoolSiC™ MOSFETs & Diodes

Infineon Silicon Carbide CoolSiC™ MOSFETs and Diodes provide a portfolio that addresses the need for smarter, more efficient energy generation, transmission, and consumption. The CoolSiC portfolio addresses customers’ needs for reduced system size and cost in mid- to high-power systems while meeting the highest quality standards, providing a long system lifetime, and guaranteeing reliability. With CoolSiC, customers will reach the most stringent efficiency targets while seeing a drop in operational system costs. The portfolio is comprised of CoolSiC Schottky diodes, CoolSiC hybrid modules, CoolSiC MOSFET modules, and discrete, plus EiceDRIVER™ gate driver ICs for driving Silicon Carbide devices.

Switch Mode Power Supplies (SMPS)

Infineon Technologies Switch Mode Power Supplies (SMPS) are a cost-effective line that includes high voltage MOSFETs, control ICs, and Silicon Carbide diodes for PFC and PWM stages, as well as low voltage MOSFETs for synchronous rectification. With these SMPS products Infineon supports the trends towards continuously reducing power consumption. Especially versatile is the new CoolMOS™ 600V C6 family which combines good efficiency with attractive pricing, as does our 3rd generation SiC diodes. For synchronous rectification the OptiMOS™ 3 series offers extremely low on-state resistance and low capacitances. Infineon's new control ICs support topologies such as quasi-resonant flyback and LLC.

Switch Mode Power Supplies - High Power Topology

Infineon Technologies Switch Mode Power Supplies - High Power Topology is suitable for power applications above 400W. Following the front end stage of an AC/DC rectifier, a DC/DC power converter is required to step down the bus voltage and provide a galvanically isolated and tightly regulated DC output (12V, 24V, 48V). While a wide range of isolated topologies are available, the phase-shifted full-bridge converter is more suitable for higher power applications for reasons such as its inherent zero-voltage Switching for the primary side switches.

Generation 5 CoolSiC™ 650V Schottky Diodes

Infineon Generation 5 CoolSiC™ 650V Schottky Diodes deliver market-leading efficiency at an attractive cost point. Infineon’s proprietary diffusion soldering process, already introduced with Generation 3, is now combined with a new, more compact design as well as the latest advancements in thin wafer technology, bringing improved thermal characteristics and lower Figures of Merit (Qc x Vf).

Se ha producido un error inesperado.


¿Tiene alguna pregunta? Visite el Centro de ayuda.
Si tiene preguntas sobre un pedido específico, inicie sesión en su cuenta.

Si tiene más problemas, comuníquese con nosotros al 800-346-6873 o envíe un correo electrónico a help@mouser.com.