FFSD10120A

onsemi
512-FFSD10120A
FFSD10120A

Fabricante:

Descripción:
Diodos Schottky de SiC Silicon Carbide Schottky Diode

Hoja de datos:
Modelo ECAD:
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Disponibilidad

Existencias:
No en existencias
Plazo de entrega de fábrica:
10 Semanas Tiempo estimado de producción de fábrica.
Mínimo: 2500   Múltiples: 2500
Precio unitario:
$-.--
Precio ext.:
$-.--
Est. Tarifa:
El envío de este producto es GRATUITO

Precio (USD)

Cantidad Precio unitario
Precio ext.
Envase tipo carrete completo (pedir en múltiplos de 2500)
$4.26 $10,650.00

Atributo del producto Valor de atributo Seleccionar atributo
onsemi
Categoría de producto: Diodos Schottky de SiC
RoHS:  
REACH - SVHC:
SMD/SMT
DPAK-3 (TO-252-3)
Single
10 A
1.2 kV
1.45 V
90 A
200 uA
- 55 C
+ 175 C
FFSD10120A
Reel
Marca: onsemi
Dp - Disipación de potencia : 283 W
Tipo de producto: SiC Schottky Diodes
Cantidad de empaque de fábrica: 2500
Subcategoría: Diodes & Rectifiers
Nombre comercial: EliteSiC
Vr - Tensión inversa: 1.2 kV
Peso de la unidad: 260.370 mg
Productos encontrados:
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Atributos seleccionados: 0

MXHTS:
8541100101
CNHTS:
8541100000
CAHTS:
8541100090
USHTS:
8541100080
JPHTS:
854110090
KRHTS:
8541109000
TARIC:
8541100000
ECCN:
EAR99

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onsemi Silicon Carbide (SiC) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. SiC Schottky Diodes feature no reverse recovery current, temperature-independent switching, and excellent thermal performance. System benefits include high efficiency, fast operating frequency, high power density, low EMI, and reduced system size and cost.  onsemi offers 650V and 1200V devices in a range of current and package options, ideal for next-generation power system designs.

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