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IXTP4N70X2M

Name: IXYS IXTP4N70X2M
Brand: IXYS
SKU: 747-IXTP4N70X2M
Price: 5.58 USD
Availability: InStock

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Mouser N.º:

747-IXTP4N70X2M

Fabricante N.º:

IXTP4N70X2M

Fabricante:

IXYS

Descripción:

Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) TO220 700V 4A N-CH X4CLASS

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En existencias: 95

Existencias:: 95 Se puede enviar inmediatamente

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Plazo de entrega de fábrica:: 41 Semanas Tiempo estimado de producción de fábrica para cantidades superiores a las que se muestran.

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Precio (USD)

Cantidad	Precio unitario	Precio ext.
	$5.58	$5.58
	$2.86	$28.60
	$2.56	$256.00
	$2.13	$1,065.00
	$1.92	$1,920.00

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Atributo del producto	Valor de atributo	Seleccionar atributo
Fabricante:	IXYS
Categoría de producto:	Transistor metal-óxido-semiconductor de efecto de campo (MOSFET)
RoHS:
Tecnología:	Si
Estilo de montaje:	Through Hole
Paquete / Cubierta:	TO-220-3
Polaridad del transistor:	N-Channel
Número de canales:	1 Channel
Vds - Tensión disruptiva entre drenaje y fuente:	700 V
Id - Corriente de drenaje continua:	4 A
Rds On - Resistencia entre drenaje y fuente:	850 mOhms
Vgs - Tensión entre puerta y fuente:	- 30 V, 30 V
Vgs th - Tensión umbral entre puerta y fuente:	2.5 V
Temperatura de trabajo mínima:	- 55 C
Temperatura de trabajo máxima:	+ 150 C
Dp - Disipación de potencia :	30 W
Modo canal:	Enhancement
Nombre comercial:	HiPerFET
Empaquetado:	Tube
Marca:	IXYS
Configuración:	Single
País de ensamblaje:	Not Available
País de difusión:	Not Available
País de origen:	KR
Tiempo de caída:	28 ns
Transconductancia hacia delante - Mín.:	2.6 S
Tipo de producto:	MOSFETs
Tiempo de subida:	27 ns
Cantidad de empaque de fábrica:	50
Subcategoría:	Transistors
Tipo de transistor:	1 N-Channel
Tiempo de retardo de apagado típico:	66 ns
Tiempo típico de demora de encendido:	20 ns

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USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

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